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KA7810E BU4312F SKY65135 ST7FLI S001M20 MT8981DE 2025B T0820
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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1052
DESCRIPTION With TO-220Fa package Complement to type 2SD1480 Low collector saturation voltage APPLICATIONS For power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM

PARAMETER
CONDITIONS Open emitter
Collector-base voltage Collector -emitter voltage
IN
Emitter-base voltage
Collector current
HAN C
SEM GE
Open base Ta=25ae
OND IC
TOR UC
VALUE -60 -60 -6 -2 -4 2.0
UNIT V V V A A
Open collector
Collector current-peak
PC
Collector power dissipation TC=25ae 25 150 -55~150 ae ae
W
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA; IB=0 IC=-2A ;IB=-0.2A IC=-1A ; VCE=-4V VCE=-60V; VBE=0 VCE=-30V; IB=0 VEB=-6V; IC=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V 35 40 MIN -60
2SB1052
SYMBOL V(BR)CEO VCEsat VBE ICES ICEO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V
-2.0 -1.2 -0.2 -0.3 -1.0
V V mA mA mA
Switching times ton tstg tf

250
Turn-on time
Storage time Fall time
HAN INC
Q 70-150 P 120-250
SEM GE
IC=-1A ;IB1=-IB2=-0.1A
OND IC
TOR UC
0.1 |I |I |I 1.5 0.3
s s s
hFE-2 Classifications R 40-90
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1052
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance: A
0.15 mm)
3


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