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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB449
DESCRIPTION *With TO-3 package *Low collector saturation voltage *Wide area of safe operation APPLICATIONS *Power amplifier applications *Power switching applications *DC-DC converters
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=50 Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -7 -3.5 22.5 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-50V; IE=0 VEB=-7V; IC=0 IC=-3A ; VCE=-2V 20 MIN -50 -50 -7
2SB449
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
TYP.
MAX
UNIT V V V
-0.7 -1.2 -10 -10 85
V V A A
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB449
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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