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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB765 DESCRIPTION *With TO-220C package *DARLINGTON *High DC current gain *Complement to type 2SD864 APPLICATIONS *For medium speed and power switching Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -3 -6 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA, RBE=> IE=-50mA ,IC=0 IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA VCB=-120V, IE=0 VCE=-100V; RBE=> IC=-1.5A ; VCE=-3V 1000 MIN -120 -7 TYP. 2SB765 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 20000 V V V V A A Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.5A ;IB1=-IB2=-3mA 0.8 3.0 1.5 s s s 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB765 Fig.2 Outline dimensions 3 |
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