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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High voltage Fast switching APPLICATIONS General purpose switching Switch mode power supplies Electronic ballasts for fluorescent lighting PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUV46 BUV46A Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO VEBO IC IB Ptot Tj Tstg INCH Base current Collector-emitter voltage NE S AG BUV46A BUV46 BUV46A BUV46 Open emitter EMIC CONDITIONS OND TOR UC VALUE 850 1000 400 450 7 5 3 UNIT V Open base V V A A W ae ae Emitter-base voltage Open collector Collector current (DC) Total power dissipation Max.operating junction temperature Storage temperature TC=25ae 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.76 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUV46 IC=0.1A ;IB=0 BUV46A BUV46 BUV46A BUV46 BUV46A BUV46 BUV46A IC=2.5A ;IB=0.5A CONDITIONS BUV46 BUV46A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat-1 Collector-emitter saturation voltage 1.5 IC=2A ;IB=0.4A IC=3.5A ;IB=0.7A 5.0 IC=3A ;IB=0.6A IC=2.5A; IB=0.5A 1.3 IC=2A; IB=0.4A VCE =VCEX; RBE =10 TC=125ae VCE =VCEX ;VBE = -2.5 V TC=125ae VEB=7V; IC=0 V VCEsat-2 Collector-emitter saturation voltage V VBEsat Base-emitter saturation voltage V ICER ICEX IEBO Collector cut-off current Collector cut-off current Emitter cut-off current Switching times ton ts tf Turn-on time Storage time Fall time HAG INC SEM NE OND IC TOR UC 0.1 1.0 0.3 2.0 1.0 1.0 3.0 |I |I |I mA mA mA For BUV46 IC=2.5A;IB1=-IB2=0.5A;VCC=150V For BUV46A IC=2A;IB1=-IB2=0.4A;VCC=150V s s s 0.8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV46 BUV46A SEM NE HAG INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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