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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1145 DESCRIPTION *With TO-220F package *High DC current gain. *DARLINGTON *Low collector saturation voltage APPLICATIONS *For high current driver and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -3 -5 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-100A; IE=0 IC=-5mA; IB=0 IC=-1.5A ; IB=-3mA IC=-1.5A ; IB=-3mA VCB=-120V;IE=0 VEB=-5V;IC=0 IC=-1.5A ; VCE=-3V 2000 MIN -120 -120 2SB1145 SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V -1.5 -2.0 -50 -3.0 V V A mA 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1145 Fig.2 Outline dimensions 3 |
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