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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB871 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -20V(Min) *High Speed Switching *Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A APPLICATIONS *Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE -40 -20 -5 -10 -20 UNIT V .cn mi e V V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB871 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -0.33A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -0.33A -1.5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -50 A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 A hFE-1 DC Current Gain IC= -0.1A; VCE= -2V hFE-2 DC Current Gain COB Collector Output Capacitance fT Current-Gain--Bandwidth Product Switching Times w w scs .i w IC= -3A; VCE= -2V IE= 0; VCB= -10V; f= 1MHz .cn mi e 45 60 260 400 pF IC= -0.5A; VCE= -10V 100 MHz ton Turn-On Time 0.1 s ts Storage Time IC= -3A; IB1= -IB2= -0.1A 0.5 s tf Fall Time 0.1 s hFE-2 Classifications R 60-120 Q 90-180 P 130-260 isc Websitewww.iscsemi.cn 2 |
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