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| SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3419(AO3419) SOT-23 MOSFET IC Features VDS (V) = -20V +0.1 2.4-0.1 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 RDS(ON) RDS(ON) RDS(ON) 75m 95m 145m (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V) +0.1 1.3-0.1 ID = -3.5 A 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 TA=25 TA=70 IDM PD R R JA JC Symbol VDS VGS ID Rating -20 12 -3.5 -2.8 -15 1.4 0.9 125 60 -55 to 150 Unit V V A Pulsed Drain Current *2 Power Dissipation *1 TA=25 TA=70 Thermal Resistance.Junction-to-Ambient Thermal Resistance.Junction-to-Case Junction and Storage Temperature Range *1The value of R JA W /W /W TJ, TSTG is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. www.kexin.com.cn 1 SMD Type KO3419(AO3419) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) ID=250 Testconditons A, VGS=0V Min -20 IC MOSFET Typ Max Unit V VDS=-16V, VGS=0V VDS=-16V, VGS=0V ,TJ=55 VDS=0V, VGS= 10V A -0.7 -0.9 59 TJ=125 83 76 111 -15 6.8 512 VGS=0V, VDS=-10V, f=1MHz 77 62 VGS=0V, VDS=0V, f=1MHz 9.2 5.5 VGS=-4.5V, VDS=- =-10V, ID=-3.5A 0.8 1.9 5 VGS=-10V, VDS=-10V, RL=2.8 ,RGEN=3 6.7 28 13.5 IF=-3.5A, dI/dt=100A/s IF=-3.5A, dI/dt=100A/s 9.8 2.7 -0.5 A -2.5 1 -1.4 75 105 95 145 A S 620 pF pF pF 13 6.6 nC nC nC ns ns ns ns 12 ns nC -2 A V m A V VDS=VGS ID=-250 VGS=-10V, ID=-3.5A Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-3.5A VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-0ff DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage ID(ON) gFS Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr IS VSD IS=-1A,VGS=0V -0.65 VGS=-4.5V, VDS=-5V VDS=-5V, ID=-3.5A -0.81 -0.95 2 www.kexin.com.cn |
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