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  Datasheet File OCR Text:
 Ordering number : ENN8118A
2SC5990
2SC5990
Applications
*
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
* * * * * *
Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Tc=25C Conditions Ratings 100 100 50 6 4 7 600 1.3 3.5 150 --55 to +150 Unit V V V V A A mA W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500mA VCE=10V, IC=500mA Ratings min typ max 0.1 0.1 250 400 400 MHz Unit A A
Marking : FH
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005 MS IM / 21405EA TS IM TB-00000376 No.8118-1/4
2SC5990
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA IC=10A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 50 -6 35 300 20 Ratings min typ 15 65 110 0.88 100 165 1.3 max Unit pF mV mV V V V V V ns ns ns
Package Dimensions
unit : mm 7007-004
Top View 4.5 1.6 1.5
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR10 50
2.5 1.0 4.0
IB1 IB2 OUTPUT
RB + 100F + 470F
RL=25
1
0.4 0.5 1.5
2
3
0.4
VBE= --5V
VCC=25V
10IB1= --10IB2= IC=1A
3.0
1 : Base 2 : Collector 3 : Emitter
Bottom View
SANYO : PCP
4.0 3.5
IC -- VCE
0m
80mA
4.0
IC -- VBE
VCE=2V
Collector Current, IC -- A
3.0 2.5 2.0 1.5
Collector Current, IC -- A
60mA 50mA 40mA
A
10
3.5 3.0 2.5 2.0 1.5 1.0 0.5
30mA 20mA 15mA 10mA
5mA
1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IB=0mA
0.8 0.9 1.0
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V
IT09552
Base-to-Emitter Voltage, VBE -- V
Ta= 75
--25C
IT08356
C 25C
No.8118-2/4
2SC5990
7 5
hFE -- IC
VCE=2V Gain-Bandwidth Product, fT -- MHz
Ta=75C 25C
1000 7 5 3 2
fT -- IC
VCE=10V
DC Current Gain, hFE
3 2
--25C
100 7 5 3 2
100 7 5
3 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
100 7
5 7 10 IT08357
10 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
Cob -- VCB
f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- A
5 3 2
IT08358
VCE(sat) -- IC
IC / IB=20
Output Capacitance, Cob -- pF
5
3 2
0.1 7 5 3 2
10 7 5 0.1
= Ta
C 75 5C --2
C 25
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
1.0 7
5 7 100 IT08359
0.01 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
57 IT08360
VCE(sat) -- IC
Collector Current, IC -- A
3
VBE(sat) -- IC
IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
1.0
0.1 7 5 3 2
Ta= --25C
7
7 Ta=
5C
75C
5
5C --2
C
25C
25
3
0.01 0.01
2
3
5
7 0.1
2
3
5 7 1.0
2
3
57 IT08361
2 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
2 10 7 5
ASO
Collector Current, IC -- A
1.4
IT08362
PC -- Ta
ICP=7A IC=4A
10
<10s
1.3 1.2
Collector Dissipation, PC -- W
M
Collector Current, IC -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.1
DC
op
era
1m 50 s 0 s 10 ms 10 0m s
tio n( Ta =2
ou
1.0
nt
0 s
ed
on
0.8
ac
er
am
ic
0.6
bo
ar
d
(2
5 C)
50
m
0.4
m2 !
0.
Tc=25C Single pulse
2 3 5 7 1.0 2 3 5 7 10 2 3 57 IT08363
0.2 0 0 20 40 60 80 100 120
8m
m
)
160
140
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta -- C
IT08364
No.8118-3/4
2SC5990
4.0 3.5
PC -- Tc
Collector Dissipation, PC -- W
3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C
IT08365
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice.
PS No.8118-4/4


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