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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5061 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *High Reliability *Built-in Damper Diode APPLICATIONS *Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature 10 A PC 80 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN KSD5061 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain--Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 3.5A IC= 3A , IB1= 0.8A ; IB2= -1.6A RL= 66.7; VCC= 200V 2.0 V tf Fall Time 0.4 s isc Websitewww.iscsemi.cn 2 |
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