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| SMD Type HEXFET Power MOSFET KRF7750 IC IC TSSOP-8 Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Unit: mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V @ TC = 25 Continuous Drain Current, VGS @ -4.5V @ TC = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @TC= 25 @TC = 70 PD PD Rating -20 4.7 3.8 38 1.0 0.64 0.008 12 -55 to + 150 125 Unit V A W W W/ V /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 When mounted on 1 inch square copper board, t 10 sec www.kexin.com.cn 1 SMD Type KRF7750 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -1.0A, VGS = 0V*1 TJ = 25 , IF =-1.0A di/dt = -100A/ s*1 26 16 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -250 A TJ ID = -1mA,Reference to 25 VGS = -4.5V, ID = -4.7A*1 VGS = -2.5V, ID = -3.8A*1 Min -20 Typ Max Unit V 0.012 0.030 0.055 -0.45 11 -1.0 -25 -100 100 26 3.9 8.0 15 54 180 210 1700 380 270 -1.0 39 5.8 12 -1.2 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -4.7A*1 VDS = -20V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 70 V S A IGSS VGS = -12V VGS = 12V ID = -4.7A VDS = -16V VGS = -5.0V VDD = -10V ID = -1.0A RD = 10 RG = 24 VGS = 0V VDS = -15V f = 1.0MHz nA nC ns pF A Body Diode) *2 -38 -1.2 39 24 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn |
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