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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4525AX DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) *High Switching Speed APPLICATIONS *Designed for use in horizontal deflection circuits of color TV receivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current- Continuous Collector Current-Peak IB B Base Current- Continuous w ww scs .i 800 V 7.5 V 12 A 30 A 8 A 12 A 45 W 150 .cn mi e IBM Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC TJ Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT /W Rth j-c isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4525AX TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 2.25A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 9A; IB= 2.25A B 1.06 1.0 2.0 0.1 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125 VEB= 6V; IC= 0 mA IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain Switching times (16kHz line deflection circuit) Storage Time Fall Time tstg tf w w scs .i w IC= 1A; VCE= 5V IC= 9A; VCE= 5V .cn mi e 4.2 mA 12 7.6 4.5 IC= 9A, IB1= 1.8A; IB2= -4.5A 0.55 s s isc Websitewww.iscsemi.cn 2 |
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