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ECO-PAC 2 IGBT Module Preliminary Data Sheet TM PSIG 75/06 PSI 75/06* PSIS 75/06* PSSI 75/06* AC 1 L9 T16 X15 NTC X16 IK 10 IC25 = 69 A VCES = 600 V VCE(sat)typ. = 2.3 V X15 NTC X16 L9 F1 AC 1 IK 10 OP 9 L9 E2 K10 X16 X13 GH 10 NTC X15 VX 18 PSI 75/06* IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C Conditions TVJ = 25C to 150C PSIS 75/06* PSSI 75/06* LMN S Maximum Ratings 600 20 69 48 100 VCES 10 208 V V A A A s A IJK PSIG 75/06* VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C Conditions *NTC optional Features W * * * * * * * * * * * * * * * Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.3 2.8 4.5 2.8 6.5 0.8 4.4 100 50 55 300 30 1.8 1.4 2.8 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688 Applications AC and DC motor control AC servo and robot drives power supplies welding inverters VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/06 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 40 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Maximum Ratings 56 35 A A Package style and outline Dimensions in mm (1mm = 0.0394") PSI Characteristic Values min. typ. max. 2.32 1.58 15 70 2.6 2.59 V V A ns 1.3 K/W K/W Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 PSSI Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g PSIG PSIS 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/06 150 A 120 VGE= 17 V 15 V 13 V 150 A 120 90 11V VGE= 17 V 15 V 13 V IC IC 90 60 30 0 11V TVJ = 125C 60 TVJ = 25C 9V 30 0 9V 42T60 42T60 0 1 2 3 4 VCE 5 V 6 0 1 2 3 4 VCE 5V 6 Fig. 1 Typ. output characteristics 150 A 120 IC VCE = 20 V Fig. 2 Typ. output characteristics 90 A 75 IF 60 45 90 60 TVJ = 125C TVJ = 25C TVJ = 125C TVJ = 25C 30 15 42T60 30 0 0 42T60 4 6 8 10 12 VGE 14 V 16 0,0 0,5 1,0 VF 1,5 V 2,0 Fig. 3 Typ. transfer characteristics 50 40 A VCE = 300 V IC = 50 A Fig. 4 Typ. forward characteristics of free wheeling diode 150 120 ns 90 TVJ = 125C VR = 300 V IF = 30 A IRM 20 V 15 VGE IRM trr trr 30 20 10 60 30 42T60 5 10 42T60 0 0 0 40 80 120 QG nC 160 0 200 400 600 -di/dt 800 A/s 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/06 10,0 mJ Eon td(on) 100 ns 75 t Eoff 4 mJ Eoff 400 ns 300 t 7,5 tr VCE = 300 V VGE = 15 V 3 5,0 50 2 td(off) VCE = 300 V VGE = 15 V RG = 22 TVJ = 125C 200 2,5 Eon RG = 22 TVJ = 125C 42T60 25 1 100 tf 0,0 0 40 80 IC A 120 0 0 42T60 0 40 80 IC A 0 120 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 3 mJ 600 ns 4 mJ Eon td(on) Eon tr 80 ns 60 t Eoff 3 VCE = 300 V VGE = 15 V IC = 50 A TVJ = 125C 42T60 2 VCE = 300 V VGE = 15 V IC = 50 A TVJ = 125C Eoff td(off) 400 t 2 40 1 200 1 0 10 20 30 40 RG 50 60 20 0 tf 42T60 0 10 20 30 40 RG 50 60 0 Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 K/W ZthJC 1 diode IGBT 120 A ICM 90 RG = 22 TVJ = 125C 0,1 0,01 60 30 0,001 42T60 single pulse 0 0 100 200 300 400 500 600 VCE 700 V 0,0001 0,00001 0,0001 0,001 VID...75-06P1 0,01 0,1 t 1 s 10 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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