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ECO-PAC 2 IGBT Module Preliminary Data Sheet TM PSIG 75/12 PSI 75/12* PSIS 75/12* PSSI 75/12* AC 1 L9 T16 X15 NTC X16 IK 10 IC25 = 92 A VCES = 1200 V VCE(sat)typ. = 2.7 V X15 NTC X16 L9 F1 AC 1 IK 10 OP 9 L9 E2 K10 X16 X13 GH 10 NTC X15 VX 18 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol PSI 75/12* Conditions TVJ = 25C to 150C PSIS 75/12* Maximum Ratings 1200 20 V V A A A s W PSSI 75/12* LMN S A IJK TC = 25C TC = 80C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C Conditions 92 62 100 VCES 10 379 PSIG 75/12 *NTC optional Features Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.7 3.0 4.5 3.2 6.5 V V V * * * * * * * * * * * * * * * VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688 3.7 mA 12.5 mA 200 100 70 500 70 9.1 6.7 3.3 0.66 nA ns ns ns ns mJ mJ nF 0.33 K/W K/W VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 60 A VGE = 15/0 V; RG = 22 Applications AC and DC motor control AC servo and robot drives power supplies welding inverters Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/12 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 60 A; TVJ = 25C TVJ = 125C Maximum Ratings 103 65 A A Package style and outline Dimensions in mm (1mm = 0.0394") PSI Characteristic Values min. typ. max. 2.28 1.67 41 200 1.32 2.6 V V A ns 0.66 K/W K/W IF = 60 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 PSSI Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g PSIG PSIS 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/12 120 A TJ = 25C VGE =17 V 15 V 13 V 11 V 100 IC 120 A TJ = 125C 100 IC 80 60 40 VGE =17 V 15 V 13 V 11 V 80 60 40 9V 9V 20 0 0,0 81T120 20 0 81T120 0,5 1,0 1,5 2,0 2,5 VCE 3,0 V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 A VCE = 20 V TJ = 25C 180 TJ = 125C 100 IC A 150 IF 120 90 60 30 81T120 TJ = 25C 80 60 40 20 0 0 DWLP55-12 5 6 7 8 9 10 VGE 11 V 0,5 1,0 1,5 2,0 2,5 VF 3,0 V 3,5 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 120 A 20 V 300 ns trr VGE 15 VCE = 600 V IC = 50 A IRM 80 200 trr 10 40 5 IRM TJ = 125C VR = 600 V IF = 50 A 100 0 81T120 0 50 100 150 200 QG 250 nC 0 81T120 0 200 400 600 A/s 800 -di/dt 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/12 24 mJ Eon 120 ns td(on) 90 t Eoff 12 mJ 10 8 6 4 VCE = 600 V VGE = 15 V RG = 22 TJ = 125C 600 Eoff ns 500 td(off) 400 t 300 200 tf 81T120 18 12 tr 60 VCE = 600 V VGE = 15 V RG = 22 TJ = 125C 81T120 6 Eon 30 2 0 100 0 0 0 20 40 60 IC 80 100 A 0 0 20 40 60 80 IC 100 A Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current ns 20 mJ V = 15 V GE Eon 15 IC = 50 A TJ = 125C VCE = 600 V 240 td(on) Eon 10 mJ VCE = 600 V t Eoff td(off) Eoff 1500 ns 1200 t 900 600 300 180 8 6 VGE = 15 V IC = 50 A TJ = 125C 10 tr 120 4 60 5 2 0 81T120 0 81T120 0 10 20 30 40 50 60 70 80 90 100 RG 0 tf 0 10 20 30 40 50 60 70 80 90 100 RG 0 Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 1 K/W 0,1 ZthJC 120 A 100 ICM 80 60 40 20 0 81T120 RG = 22 TJ = 125C VCEK < VCES 0,01 0,001 0,0001 diode IGBT single pulse VID...75-12P1 0 200 400 600 800 1000 1200 V VCE 0,00001 0,00001 0,0001 0,001 0,01 t 0,1 s 1 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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