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| INCHANGE Semiconductor isc Product Specification 2SC2488 isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SA1064 APPLICATIONS *Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 150 150 5 8 12 100 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature PC W Tj 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SC2488 isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 5V 2.5 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 1 mA IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product hFE-2 Classifications R 40-80 Q 60-120 w w. w O 140-280 .cn mi cse is IC= 1A; VCE= 5V 40 IC= 8A; VCE= 5V 20 IC= 0.5A; VCE= 10V VEB= 5V; IC= 0 2 mA 280 50 MHz P 90-180 isc Websitewww.iscsemi.cn |
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