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 EMN11
Diodes
Switching diode
EMN11
Application Ultra high speed switching Dimensions (Unit : mm) Land size figure (Unit : mm)
1.0 0.5 0.5
1.60.1 0.220.05 0.130.05 (5) (4)
1.20.1
1.60.1
0.45
Features 1) Ultra small mold type. (EMD6) 2) High reliability
(6)
0.25 0.15
0.3 0.15 0.25
00.1
0.4
EMD6
Construction Silicon epitaxial planar
(1) 0.5
(2) 0.5
(3)
Structure
0.50.05
1.00.1
ROHM : EMD6 JEITA : SC-75A Size dot (year week factory)
Taping specifications (Unit : mm)
1.750.1
4.00.1 2.00.05
1.5 -0
+0.1
0.30.1
1.650.1 5.50.2 0~0.1 3.50.05 8.00.2
1.70.05
1PIN 4.00.1
0.80.1
0.650.1
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average rectified forward current Surge current t=1us (Single) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM Io Isurge Pd Tj Tstg Limits 80 80 300 100 4 150 150 -55 to +150 Unit V V mA mA A mW/Total*
*Pd = 120mW when only 1 circuit is operating. CONDITION = Each terminal mounted on a recommended land pattern.(0.35x0.9mm)
Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR Ct trr Min. Typ. Max. 1.2 0.1 3.5 4 Unit V A pF ns Conditions IF=100mA VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50
Rev.B
1.650.01
1.55
1/2
EMN11
Diodes
Electrical characteristic curves (Ta=25C)
100 Ta=75 Ta=125 10 Ta=150 Ta=25 Ta=-25 1
10000 1000
Ta=150
Ta=125
10
f=1MHz REVERSE CURRENT:IR(nA) Ta=75
100
FORWARD CURRENT:IF(mA)
Ta=25
10 1 0.1 0.01 0 10 20 30 40 50 60 70 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 80
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
Ta=-25
0.1
0 100 200 300 400 500 600 700 800 900 100 0
0.1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
950 FORWARD VOLTAGE:VF(mV) Ta=25 IF=100mA n=30pcs
100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 0 VF DISPERSION MAP IR DISPERSION MAP AVE:9.655nA Ta=25 VR=80V n=10pcs
1.5 1.4 1.3 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 AVE:1.040pF Ta=25 VR=6V f=1MHz n=10pcs
940
930
920
910 AVE:921.7m 900
Ct DISPERSION MAP
20 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A)
10 9 8 7 6 5 4 3 2 1 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:1.93ns PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 VR=6V IF=5mA RL=50 n=10pcs
5 Ifsm 8.3ms 8.3ms 1cyc
15
Ifsm
1cyc 8.3ms
4
3
10
2
5 AVE:3.50A 0
1
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
100 PEAK SURGE FORWARD CURRENT:IFSM(A)
1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Ifsm t
10 9
Rth(j-a)
100
ELECTROSTATIC DDISCHARGE TEST ESD(KV)
8 7 6 5 4 3 2 1 0 C=200pF R=0 C=100pF R=1.5k AVE:0.97kV AVE:2.54kV
Rth(j-c)
Mounted on epoxy board IM=10mA IF=100MA
10
10
1ms time
300us
1 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100
1 0.001
TIME:t(ms) Rth-t CHARACTERISTICS
0.1
10
1000
ESD DISPERSION MAP
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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