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LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.56 lnch)
Pb
Lead-Free Parts
LDD511/2DBK-XX/RP4-PF
DATA SHEET
DOC. NO : REV. DATE : :
QW0905- LDD511/2DBK-XX/RP4-PF A 07 - Apr. - 2009
DCC
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LDD511/2DBK-XX/RP4-PF Page 1/8
Package Dimensions
25.0(0.984") PIN 18 PIN 10
8.1(0.319")
DIG.1
14.2 (0.56")
DIG.2
19.0 (0.748") 15.24 (0.6")
PIN 1
PIN 9
r 1.7(0.067")
A
LDD511/2DBK-XX/RP4-PF LIGITEK
F E
G
B C
D
DP
4.0O 0.5
O 0.51
TYP 2.54X8=20.32 (0.8")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LDD511/2DBK-XX/RP4-PF Page 2/8
Internal Circuit Diagram
LDD511DBK-XX/RP4-PF
14 DIG.1 A B C D E F G DP DIG.2 A B C D E F G DP 13
16 15 3 2 1 18 17 4
11 10 8 6 5 12 7 9
LDD512DBK-XX/RP4-PF
14 DIG.1 A B C D E F G DP DIG.2 A B C D E F G DP 13
16 15 3 2 1 18 17 4
11 10 8 6 5 12 7 9
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LDD511/2DBK-XX/RP4-PF Page 3/8
Electrical Connection
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
LDD511DBK-XX/RP4-PF Anode Anode Anode Anode Anode Anode Anode Anode Anode Anode Anode Anode E Dig.1 D Dig.1 C Dig.1 DP Dig.1 E Dig.2 D Dig.2 G Dig.2 C Dig.2 DP Dig.2 B Dig.2 A Dig.2 F Dig.2
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
LDD512DBK-XX/RP4-PF Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode E Dig.1 D Dig.1 C Dig.1 DP Dig.1 E Dig.2 D Dig.2 G Dig.2 C Dig.2 DP Dig.2 B Dig.2 A Dig.2 F Dig.2
Common Cathode Dig.2 Common Cathode Dig.1 Anode Anode Anode Anode B Dig.1 A Dig.1 G Dig.1 F Dig.1
Common Anode Dig.2 Common Anode Dig.1 Cathode Cathode Cathode Cathode B Dig.1 A Dig.1 G Dig.1 F Dig.1
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LDD511/2DBK-XX/RP4-PF Page 4/8
Absolute Maximum Ratings at Ta=25 J
Ratings Parameter Symbol DBK Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF 30 mA UNIT
IFP
100
mA
PD Ir ESD Topr Tstg
120 50 500 -25 ~ +80 -25 ~ +85
mW
g A V J J
Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded.
Part Selection And Application Information(Ratings at 25J )
Electrical
PART NO
common cathode or anode Material Emitted
CHIP Common Cathode
InGaN/SiC Blue
f D (nm)
f
(nm)
Typ.
Vf(v) Max
Iv(mcd) Min. Typ.
IV-M
LDD511DBK-XX/RP4-PF
470 Common Anode
30
3.5
4.0
18
31
2:1
LDD512DBK-XX/RP4-PF
Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LDD511/2DBK-XX/RP4-PF Page 5/8
Test Condition For Each Parameter
Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio
Symbol Vf Iv
Unit volt mcd nm nm
Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V
f D f
Ir IV-M
g A
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LDD511/2DBK-XX/RP4-PF Page 6/8
Typical Electro-Optical Characteristics Curve
DBK CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.0
1000
Forward Current(mA)
100 10 1 01 1.0 2.0 3.0 4.0 5.0
Relative Intensity Normalize @20mA
2.5 2.0 1.5 1.0 0.5 0.0 1 10 100 1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA Normalize @25J
-40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25J
1.2
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1 1.0
0.9
0.8
Ambient Temperature(J )
Ambient Temperature(J )
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 400 450 500 550
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LDD511/2DBK-XX/RP4-PF Page 7/8
Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350 C Max Soldering Time:3 Seconds Max(One time only) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 C 2.Wave Soldering Profile Dip Soldering Preheat: 120 C Max Preheat time: 60seconds Max Ramp-up:2C/sec(max) Ramp-Down:-5 C/sec(max) Solder Bath:260 C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 C
Temp( C) 260 C3sec Max 260X 5 /sec max 120X 2 /sec max Preheat 60 Seconds Max 50 100 150 Time(sec)
25X 0X 0
Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LDD511/2DBK-XX/RP4-PF Page 8/8
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 JO 5J 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65JO 5J 2.RH=90 %~95% 3.t=240hrs O 2hrs
The purpose of this test is the resistance of the device under tropical for hours.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 JO 5J &-40JO (10min) (10min) 2.total 10 cycles
5J
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 JO 5J 2.Dwell time= 10 O 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 JO 5J 2.Dwell time=5 O 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2

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