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 Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2SA914
Absolute Maximun Ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -100 1.2 150 -55~150 ae ae UNIT V V V mA mA W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SA914
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1mA;IB=0
-150
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=-10|I
A ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-30mA ;IB=-3mA
-1.0
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-1
|I
A
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
|I
A
hFE
DC current gain
IC=-10mA ; VCE=-5V
90
450
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
5
pF
fT
Transition frequency
IC=10mA ; VCB=-10V
70
MHz
hFE Classifications Q 90-155 R 130-220 S 185-330 T 260-450
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA914
Fig.2 Outline dimensions
JMnic


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