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| SRFET TM AO4726 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4726 and AO4726L are electrically identical. -RoHS Compliant -AO4726L is Halogen Free D S S S G D D D D Features VDS (V) = 30V ID =18A (VGS = 10V) RDS(ON) < 6m (VGS = 10V) RDS(ON) < 7m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Avalanche Current B B B Maximum Units V 30 12 18 14 80 42 265 3.1 2.0 -55 to 150 TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C A Repetitive avalanche energy L=0.3mH Power Dissipation TA=70C mJ W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State Steady-State Symbol RJA RJL Typ 32 60 17 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4726 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=17A Forward Transconductance VDS=5V, ID=18A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=250uA, V GS=0V VDS=30V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=18A TJ=125C 1.4 80 4.5 7 5.3 90 0.36 0.5 5.5 3940 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 590 255 0.72 72.8 VGS=10V, V DS=15V, ID=18A 35.0 10.4 12.4 9.8 VGS=10V, V DS=15V, R L=0.83, RGEN=3 IF=18A, dI/dt=300A/s IF=18A, dI/dt=300A/s 8.4 45 10 36 32 43 1.1 95 5120 6 9 7 1.75 Min 30 0.1 10 100 2.3 Typ Max Units V mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. 12 B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA curve A provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev2: May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4726 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 VGS=10V 25 60 20 ID (A) 40 ID(A) VGS=3V 15 10 20 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=17A VGS=4.5V ID=18A VGS=10V 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 25C 30 VDS=5V DYNAMIC 8 7 RDS(ON) (m) VGS=4.5V 5 VGS=10V 4 2 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 12 14 ID=18A 12 10 8 6 4 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) www.aosmd.com AO4726 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 70 80 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=18A Capacitance (pF) 6000 5000 Ciss 4000 3000 2000 1000 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss DYNAMIC PARAMETERS 1000.0 100.0 ID (Amps) Power (W) 10.0 1.0 0.1 0.0 0.01 TJ(Max)=150C TA=25C DC RDS(ON) limited 10s 100 1ms 10ms 0.1s 1s 10s 100 80 60 40 20 0 0.0001 TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 12 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=75C/W PD Ton T 100 1000 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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