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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN/PNP Silicon AF Transistor Array VOLTAGE 50 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other switching applications. CH817UPNPT CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN/PNP transistor in one package. (1) (6) 0.95 0.95 (3) (4) 0.25~0.5 1.4~1.8 SC-74/SOT-457 1.7~2.1 2.7~3.1 CONSTRUCTION * NPN/PNP transistor in one package. 0.08~0.2 0.3~0.6 C1 B2 5 E2 4 0.935~1.3 0~0.15 2.6~3.0 CIRCUIT 6 TR2 TR1 1 E1 2 B1 3 C2 Dimensions in millimeters SC-74/SOT-457 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - Tamb 25 C; note 1 - MIN. MAX. 45 50 5 500 1000 200 330 +150 150 +150 V V V UNIT mA mA mA mW C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CH817UPNPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE VCEsat VBEsat Cc Ce fT F Note 1. Pulse test: tp 300 s; 0.02. PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure CONDITIONS IE = 0; VCB = 25 V IC = 0; VCB = 25 V; TA = 150 OC IC = 0; VEB = 4 V IC = 100 mA; VCE = 1.0V; note 1 IC = 300 mA; VCE = 1.0V IC = 500 mA; IB = 50 mA IC = 500 mA; IB = 50 mA IE = ie = 0; VCB = 10V ; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 50 mA; VCE = 5 V ; f = 100 MHz IC = 100 A; VCE = 5 V; RS = 1 k; f = 1.0 kHz - - - 160 100 - - - - 170 - MIN. MAX. 100 50 100 400 - 700 1.2 6 60 - 4 mV V pF pF MHz dB UNIT nA uA nA PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 105 UNIT K/W RATING CHARACTERISTIC CURVES ( CH817UPNPT ) Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 25V 400 mW 5 10 V CBO nA 10 4 300 P tot 250 10 200 3 max 150 10 2 typ 100 10 50 1 0 0 20 40 60 80 100 120 OC 150 10 0 0 50 100 oC 150 TS TA Permissible Pulse Load R thJS = f (t p ) Permissible Pulse Load Ptotmax / PtotDC = f (t p ) 10 3 K/W 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp RATING CHARACTERISTIC CURVES ( CH817UPNPT ) Collector-emitter saturation voltage IC = f (VCEsat ), h FE = 10 10 3 Base-emitter saturation voltage IC = f (VBEsat ), h FE = 10 10 3 C mA 150 oC 25 oC -50 oC C mA 150 oC 25 oC -50 oC 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.2 0.4 0.6 V 0.8 10 -1 0 1.0 2.0 3.0 V 4.0 VCEsat V BEsat DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE 5 100 oC 25 oC -50 oC 10 5 2 Transition frequency fT = f (IC) VCE = 5V 10 3 fT MHz 5 10 2 10 1 5 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 10 1 10 0 10 1 3 10 2 mA 10 C C |
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