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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDY83 DESCRIPTION *Continuous Collector Current-IC= -4A *Collector Power Dissipation: PC= 36W @TC= 25 *Complement to Type BDY81 APPLICATIONS *Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEX VCEO VEBO IC IB B PARAMETER Collector-Base Voltage VALUE -50 UNIT V Collector-Emitter Voltage VBE= +1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature w w scs .i w -50 -50 -10 -4 -2 36 150 -55~175 .cn mi e V V V A A PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -100mA; IB= 0 IC= -10mA; IE= 0 IE= -10mA; IC= 0 IC= -3A; IB= -0.3A B BDY83 MIN -50 -50 -10 TYP. MAX UNIT V V V -1.5 -0.9 -10 -0.2 -0.1 240 V V mA mA mA IC= -0.5A; VCE= -5V VCE= -20V; IB= 0 B Current Gain-Bandwidth Product w C ww scs .i VEB= -5V; IC= 0 VCB= -20V; IE= 0 IC= -0.5A; VCE= -5V .cn mi e 40 10 3 IC= -2.5A; VCE= -5V IC= -0.5A; VCE= -10V MHz hFE-1 Classifications A 40-80 B 70-140 120-240 isc Websitewww.iscsemi.cn 2 |
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