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NYC222STT1G, NYC226STT1G, NYC228STT1G Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications.
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SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
G A K
* * * * *
Blocking Voltage to 600 V High Surge Current - 15 A Very Low Forward "On" Voltage at High Current Low-Cost Surface Mount SOT-223 Package These are Pb-Free Devices
MARKING DIAGRAM
Value Unit V 50 400 600 1.5 15 0.9 0.5 0.1 0.2 5.0 A A A2s W W A V C C 1 2 3 4 SOT-223 CASE 318E STYLE 11 1 A = Assembly Location Y = Year W = Work Week XXXXX = Device Code G = Pb-Free Package (Note: Microdot may be in either location) AYW XXXXXG G
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (RGK = IK, TJ = *40 to +110C, Sine Wave, 50 to 60 Hz, Gate Open) NYC222 NYC226 NYC228 On-State Current RMS (180 Conduction Angles, TC = 80C) Peak Non-repetitive Surge Current, @TA = 25C, (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 msec, TA = 25C) Forward Average Gate Power (t = 8.3 msec, TA = 25C) Forward Peak Gate Current (Pulse Width 1.0 ms, TA = 25C) Reverse Peak Gate Voltage (Pulse Width 1.0 ms, TA = 25C) Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Symbol VDRM, VRRM
IT(RMS) ITSM I2t PGM PG(AV) IFGM VRGM TJ Tstg
PIN ASSIGNMENT
K (Cathode) A (Anode) G (Gate) A (Anode)
-40 to +110 -40 to +150
ORDERING INFORMATION
Device NYC222STT1G NYC226STT1G NYC228STT1G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000 /Tape & Reel 1000 /Tape & Reel 1000 /Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
July, 2008 - Rev. 0
1
Publication Order Number: NYC222/D
NYC222STT1G, NYC226STT1G, NYC228STT1G
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient PCB Mounted Thermal Resistance, Junction-to-Tab Measured on MT2 Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum Symbol RqJA RqJT TL Max 156 25 260 Unit C/W C/W C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM/VRRM; RGK = 1000 W) ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 2.2 A Peak) Gate Trigger Current (dc) (Note 3) (VAK = 7 Vdc, RL = 100 W) Gate Trigger Voltage (dc) (Note 3) (VAK = 7 Vdc, RL = 100 W) Gate Non-Trigger Voltage (VAK = VDRM, RL = 100 W) Holding Current (VAK = 12 V, RGK = 1000 W) Initiating Current = 200 mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (TC = 110C) 2. Pulse Width = 1.0 ms, Duty Cycle v 1%. 3. RGK Current not included in measurement. dv/dt - 25 - V/ms TC = 25C TC = -40C TC = 25C TC = -40C TC = 110C TC = 25C TC = -40C VTM IGT VGT VGD IH - - - - - 0.1 1.2 30 - - - - 1.7 200 500 0.8 1.2 - V mA V V mA TC = 25C TC = 110C IDRM, IRRM - - - - 10 200 mA mA Symbol Min Typ Max Unit
- -
2.0 -
5.0 10
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak on State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode -
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
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NYC222STT1G, NYC226STT1G, NYC228STT1G
CURRENT DERATING
TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
140
140 120 100 80 60 40 20 0 0 dc a = 180 a = CONDUCTION ANGLE 0.2 0.4 0.6 0.8 1.0 IT(AV), AVERAGE ONSTATE CURRENT (AMP)
100 a = 180 a = CONDUCTION ANGLE dc
60
20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT(AV), AVERAGE ONSTATE CURRENT (AMPS)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
5.0
3.0 2.0 TJ = 110C 25C 1.0 0.7 0.5
I T, INSTANTANEOUS ONSTATE CURRENT (AMP)
0.3 0.2
0.1 0.07 0.05
0.03 0.02
0.01 0 0.5 1.0 1.5 2.0 2.5 VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
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NYC222STT1G, NYC226STT1G, NYC228STT1G
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 t, TIME (ms)
100
200
500
1000
2000
5000
1000
Figure 4. Thermal Response
TYPICAL CHARACTERISTICS
0.8 VGT, GATE TRIGGER VOLTAGE (VOLTS) VAK = 7.0 V RL = 100 100 I GT GATE TRIGGER CURRENT ( A) 100 110 50 30 20 10 5.0 3.0 2.0 1.0 -40
0.7
0.6
0.5
0.4 0.3 -75
-50
-25
0
25
50
75
-20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (C)
TJ JUNCTION TEMPERATURE (C)
Figure 5. Typical Gate Trigger Voltage
P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
Figure 6. Typical Gate Trigger Current
10 I H , HOLDING CURRENT (mA)
2.0 1.8 30 60 90 120 180
VAK = 12 V RL = 100 W 5.0
1.6 1.4 1.2 1.0
0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8
dc
2.0
1.0 -40
-20
0
20
40
60
80
100 110
1.0
1.2
1.4
1.6
TJ, JUNCTION TEMPERATURE (C)
IT(AV), AVERAGE ONSTATE CURRENT (AMPS)
Figure 7. Typical Holding Current
Figure 8. Power Dissipation
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NYC222STT1G, NYC226STT1G, NYC228STT1G
PACKAGE DIMENSIONS
SOT-223 (TO-261) CASE 318E-04 ISSUE M
D b1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 -
4
HE
E
1 2 3
e1
b e A q L1 C
DIM A A1 b b1 c D E e e1 L1 HE
q
MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0
MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0
MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10
0.08 (0003)
A1
STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2
SOLDERING FOOTPRINT*
3.8 0.15 2.0 0.079
2.3 0.091
2.3 0.091
6.3 0.248
2.0 0.079 1.5 0.059
mm inches
SCALE 6:1
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MCR22-6/D

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