 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTD5413N Power MOSFET 30 Amps, 60 Volts Single N-Channel DPAK Features * * * * * * * * * Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb-Free Devices LED Lighting and LED Backlight Drivers DC-DC Converters DC Motor Drivers Switch Mode Power Supplies Power Supplies Secondary Side Synchronous Rectification Parameter Symbol VDSS VGS VGS ID Value 60 $20 $30 30 23 PD IDM TJ, Tstg IS EAS 68 84 -55 to +175 30 135 W A C A mJ Unit V V V A http://onsemi.com ID MAX (Note 1) 30 A Applications V(BR)DSS 60 V RDS(ON) MAX 26 mW @ 10 V N-Channel D MAXIMUM RATINGS (TJ = 25C Unless otherwise specified) G S Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Gate-to-Source Voltage - Nonrepetitive (TP < 10 ms) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C MARKING DIAGRAM 4 Drain YWW 5413N 2 1 3 Drain Gate Source 4 12 DPAK CASE 369AA STYLE 2 tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 50 Vdc, VGS = 10 V, IL(pk) = 30 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds 3 TL 260 C 5413N Y WW G = Device Code = Year = Work Week = Pb-Free Device THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Steady State (Note 1) Symbol RqJC RqJA Max 2.2 58.5 Unit C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [1 oz] including traces). (c) Semiconductor Components Industries, LLC, 2008 October, 2008 - Rev. 0 1 Publication Order Number: NTD5413N/D NTD5413N ELECTRICAL CHARACTERISTICS (TJ = 25C Unless otherwise specified) Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(th) VGS(th)/TJ VDS(on) RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V IS = 20 A TJ = 25C TJ = 125C VGS = 10 V, VDD = 48 V, ID = 20 A, RG = 2.5 W VGS = 10 V, VDS = 48 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, 150C Drain-to-Source On-Resistance Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge VDS = 25 V, VGS = 0 V, f = 1 MHz 1160 240 100 35 1.4 6.5 16.1 46 nC 1725 pF VGS = 10 V, ID = 20 A VDS = 15 V, ID = 20 A VGS = 0 V VDS = 60 V TJ = 25C TJ = 150C VDS = 0 V, ID = 250 mA 60 67.5 1.0 50 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Voltage VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA 2.0 3.4 7.9 0.37 0.86 18.5 36 4.0 V mV/C 0.52 V 26 mW S SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 2) 0.87 0.8 52 37 15 105.7 nC ns 1.2 V 11 20 28 8.0 ns Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Stored Charge IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD5413NT4G Package DPAK (Pb-Free) Shipping 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD5413N TYPICAL PERFORMANCE CURVES 80 80 VDS 10 V ID, DRAIN CURRENT (A) 60 10 V 7V TJ = 25C ID, DRAIN CURRENT (A) 60 6V 40 40 TJ = 125C 20 TJ = 25C TJ = -55C 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) 20 5V 0 0 VGS = 4.8 V 1 2 3 4 5 0 3 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 5 6 7 8 0.028 0.026 0.024 0.022 0.020 0.018 0.016 0.014 0.012 0.010 10 ID = 20 A TJ = 25C TJ = 25C VGS = 10 V 9 10 20 30 40 50 60 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 10 ID = 20 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 100 TJ = 125C 5 10 15 20 25 30 35 40 45 50 55 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTD5413N TYPICAL PERFORMANCE CURVES 2500 2000 1500 Ciss 1000 500 0 Crss 0 10 20 30 40 Coss 50 60 VGS = 0 V TJ = 25C 10 8 6 4 2 0 VGS, GATE-TO-SOURCE VOLTAGE (V) QT C, CAPACITANCE (pF) Q1 Q2 ID = 20 A TJ = 25C 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDD = 48 V ID = 20 A VGS = 10 V 100 t, TIME (ns) td(off) tf 10 td(on) tr 40 Figure 8. Gate-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 30 20 10 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 AVALANCHE ENERGY (mJ) 0 V VGS 10 V Single Pulse TC = 25C 10 ms dc 140 120 100 80 60 40 20 0 25 Figure 10. Diode Forward Voltage vs. Current ID = 30 A ID, DRAIN CURRENT (A) 100 1 ms 100 ms 10 ms 10 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTD5413N TYPICAL PERFORMANCE CURVES 100 D = 0.5 10 1 r(t), (C/W) 0.2 0.1 0.05 0.02 0.01 0.1 0.01 Single Pulse Surface-Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 NTD5413N PACKAGE DIMENSIONS DPAK CASE 369AA-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E S A 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTD5413N/D |
Price & Availability of NTD5413NT4G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |