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| Datasheet File OCR Text: |
| Gunter Semiconductor GmbH N Channel Power MOSFET FOR LOGIC DRIVE GLC014 Chip Specification General Description: * Advanced Process Technology * Dynamic dv/dt Rating * 175 Operating Temperature * Fast Switching * Fully Avalanche Rated * RDS(ON) rated at VGS = 5V * Ease of parallel Mechanical Data: D2 Dimension 1.92mm x 2.18mm Thickness: 400 m Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperature Storage Temperature @Ta=25 Symbol V(BR)DSS RDS(ON) ID@25 ID@100 Tj Limit Unit Test Conditions VGS=0V, ID=250 VGS=5V, ID=6 VGS= 5V VGS= 5V 60 0.2 10 7.2 -55~175 -55~175 V A A TSTR Target Device: IRLZ14 TO-220AB PD 43 W @Tc=25 |
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