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XP131A1235SR
Power MOSFET
ETR1102_001
GENERAL DESCRIPTION
The XP131A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
APPLICATIONS
Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems
FEATURES
Low On-State Resistance : Rds(on)=0.035(Vgs=4.5V)
: Rds(on)=0.048(Vgs=2.5V) Ultra High-Speed Switching Driving Voltage DMOS Structure Package : SOP-8 : 2.5V N-Channel Power MOSFET
PIN CONFIGURATION
PIN ASSIGNMENT
PIN NUMBER 1~3 4 5~8 PIN NAME S G D FUNCTION Source Gate Drain
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Ta = 25
PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Channel Power Dissipation * Channel Temperature Storage Temperature Range SYMBOL RATINGS UNITS Vdss Vgss Id Idp Idr Pd Tch Tstg 20 12 7 30 7 2.5 150 -55~150 V V A A A W
* When implemented on a glass epoxy PCB
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XP131A1235SR
ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER Drain Cut-Off Current Gate-Source Leak Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance * Forward Transfer Admittance * Body Drain Diode Forward Voltage SYMBOL Idss Igss Vgs(off) Rds(on) | Yfs | Vf CONDITIONS Vds=20V, Vgs=0V Vgs=12V, Vds=0V Id=1mA, Vds=10V Id=4A, Vds=4.5V Id=4A, Vgs=2.5V Id=4A, Vds=10V If=7A, Vgs=0V MIN. 0.5 TYP. 0.025 0.035 16 0.85 MAX. 10 1 1.2 0.035 0.048 1.1
Ta = 25
UNITS A A V S V
* Effective during pulse test.
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds = 10V , Vgs = 0V f = 1MHz CONDITIONS MIN. TYP. 760 430 200 MAX. -
Ta = 25
UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 4A Vdd = 10V CONDITIONS MIN. TYP. 10 20 55 15 MAX. -
Ta = 25
UNITS ns ns ns ns
Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN. TYP. 50 MAX. UNITS /W
2/5
XP131A1235SR
TYPICAL PERFORMANCE CHARACTERISTICS
3/5
XP131A1235SR
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(11) Standardized transition Thermal Resistance vs. Pulse Width
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XP131A1235SR
1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this catalog is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this catalog. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this catalog. 4. The products in this catalog are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this catalog within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this catalog may be copied or reproduced without the prior permission of Torex Semiconductor Ltd.
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