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APT27GA90BD15 APT27GA90SD15
900V High Speed PT IGBT
(R)
TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short G C delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the E poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
(B)
D3PAK
C E
(S)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
900 48 27 79 30 223 79A @ 900V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 14A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 350 1500 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6343 Rev D 7 - 2009
VGS = 30V
Microsemi Website - http://www.microsemi.com
Dynamic Characteristic
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 14A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 14A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 14A RG = 104 TJ = +125C 79
APT27GA90BD_SD15
Min Typ
1390 145 30 62 8 24 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
A 9 8 98 84 413 287 8 10 137 144 760 647 J ns J ns
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT Torque
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
-
Max
.56 1.18
Unit
C/W g in*lbf
-
5.9
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6343 Rev D 7 - 2009
Typical Performance Curves
50
V
GE
APT27GA90BD_SD15
250 225 IC, COLLECTOR CURRENT (A) 200 175 150 125 100 75 50 25 0 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 14A C T = 25C
J
= 15V
15V 13V
IC, COLLECTOR CURRENT (A)
40
TJ= 55C TJ= 125C
11V 10V 9V 8V 7V 6V
30
TJ= 150C
20 TJ= 25C 10
0
100
0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
16 14 12 10 8 6 4 2 0
IC, COLLECTOR CURRENT (A)
80
VCE = 180V VCE = 450V VCE = 720V
60
40 TJ= 25C 20 TJ= 125C 0 0 2 4 6 TJ= -55C 8 10 12 14 16
0
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4 3 2 1 0 IC = 7A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
5
40 60 GATE CHARGE (nC) FIGURE 4, Gate charge
80
4 IC = 28A IC = 14A 2 IC = 7A 1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
3
IC = 28A IC = 14A
6
8
10
12
14
16
0
0
25
50
75
100
125
150
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 50
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
IC, DC COLLECTOR CURRENT (A)
40
30
20 052-6343 Rev D 7 - 2009
10
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
0
25
50
Typical Performance Curves
16 td(ON), TURN-ON DELAY TIME (ns) 14 12 10 8 6 4 2 0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30 25 20 tr, FALL TIME (ns) 15 10 5 0
TJ = 25 or 125C,VGE = 15V RG = 10, L = 100H, VCE = 600V
APT27GA90BD_SD15
200 td(OFF), TURN-OFF DELAY TIME (ns) 175 150 125 100 75 50 25 0
VCE = 600V RG = 10 L = 100H VGE =15V,TJ=25C VGE =15V,TJ=125C
VCE = 600V TJ = 25C, or 125C RG = 10 L = 100H
0
0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 180 160
tr, RISE TIME (ns)
140 120 100 80 60 40 20 0 5 10 15 20 25 30 0
RG = 10, L = 100H, VCE = 600V TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2000 Eon2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R =10
G
0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
1600 1400 1200 1000 800 600 400 200 0
V = 600V CE V = +15V GE R = 10
G
1600
1200
TJ = 125C
TJ = 125C
800
400
TJ = 25C
TJ = 25C
0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2500 SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J)
V = 600V CE V = +15V GE T = 125C
J
0
0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 2000
V = 600V CE V = +15V GE R = 10
G
Eon2,28A Eoff,28A
2000
Eon2,28A
1500
1500
Eoff,28A
1000
Eon2,14A
052-6343 Rev D 7 - 2009
1000
Eon2,14A Eoff,14A Eon2,7A Eoff,7A
500
500
Eoff,14A Eon2,7A Eoff,7A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10,000 1000
APT27GA90BD_SD15
C, CAPACITANCE (pF)
Cies 1,000
IC, COLLECTOR CURRENT (A)
100
10
100
Coes Cres
1
0 200 400 600 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0. 6 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0. 5 0. 4 0. 3 0. 2 0. 1 0 0.7
0.5
Note:
PDM
0.3
t1 t2
0.1 0.05 10
-5
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6343 Rev D 7 - 2009
APT27GA90BD_SD15
10% Gate Voltage td(on) 90% TJ = 125C
APT15DQ100
tr
V CC IC V CE
Collector Current
5%
10%
5%
Collector Voltage
Switching Energy
A D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C
Gate Voltage
Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
052-6343 Rev D 7 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 126C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT27GA90BD_SD15
15 29 80 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125C
Min
Type
2.5 3.06 1.92
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.7 0.80 0.5
Note:
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 15A, diF/dt = -200A/s VR = 667V, TC = 25C
Min
-
Typ 20 235 185 3 300 810 6 125 1150 19
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 667V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 667V, TC = 125C
-
0.60
PDM
0.40
t1 t2
0.3
0.20 0
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
0.676 Dissipated Power (Watts) 0.00147 0.0440
TC (C)
0.504 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6343 Rev D 7 - 2009
ZEXT
Dynamic Characteristics
45
TJ = 25C unless otherwise specified
400 30A trr, REVERSE RECOVERY TIME (ns) 350 300 250 200 15A
APT27GA90BD_SD15
T = 125C J V = 667V
R
40 IF, FORWARD CURRENT (A) 35 30 25 20 15 10 5 0 0 TJ = 125C TJ = 25C TJ = -55C TJ = 175C
7.5A 150 100 50
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 2000 Qrr, REVERSE RECOVERY CHARGE (nC) 1800 1600 1400 1200 1000 800 600 400 200 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 IRRM Qrr trr 0 7.5A 15A
T = 125C J V = 667V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 667V
R
0
30A
30A
20
15 15A 10 7.5A 5
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5 0
Duty cycle = 0.5 T = 175C
J
0
0.6 0.4 0.2 0.0
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 30 20 10 0 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
052-6343 Rev D 7 - 2009
Dynamic Characteristic
TJ = 25C unless otherwise specified
Vr
APT27GA90BD_SD15
+18V 0V
diF /dt Adjust
APT10035LLL
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
Collector (Cathode) (Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector (Cathode) Emitter (Anode)
Heat Sink (Collector) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6343 Rev D 7 - 2009

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