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Datasheet File OCR Text: |
S T U/D410S S amHop Microelectronics C orp. Mar. 26 2007 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( mW ) ID 30A R DS (ON) S uper high dense cell design for low R DS (ON). Max 20 @ V G S = 10V 30 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D D G S G D G S S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous b -P ulsed a S ymbol VDS VGS @ TC=25 C ID IDM IS PD TJ, TS TG Limit 40 20 30 100 8 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T U/D410S E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS tD(ON) tr tD(OFF) tf Qg Qgs Qgd Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 10A VGS =4.5V, ID= 8A VDS = 10V, VGS = 10V VDS = 10V, ID = 10A Min Typ C Max Unit 40 1 10 1 1.9 16 23 30 17 690 140 95 3 20 30 V uA uA V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ PF PF PF S WITCHING CHAR ACTE R IS TICS b Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge VDD = 15V ID = 1 A VGS = 10V R GE N = 3 ohm VDS =20V, ID =10A,VGS =10V VDS =20V, ID =10A,VGS =4.5V VDS =20V, ID = 10A VGS =10V 2 13.1 13.5 45.7 11.8 13.5 6.7 1.65 3.85 ns ns ns ns nC nC nC nC S T U/D410S E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = 8A Min Typ Max Unit 0.84 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 45 V G S =10V 36 V G S =4.5V V G S =4V 16 20 ID, Drain C urrent(A) 27 ID, Drain C urrent (A) 12 18 V G S =3.5V 8 25 C 4 T j= 125 C 9 V G S =3V -55 C 0 0 0.8 1.6 2.4 3.2 4.0 4.8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 42 1.75 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 35 1.60 1.45 1.30 1.15 1.0 0.8 -25 V G S =4.5V ID=8A V G S =10V ID=10A R DS (on) (m ) i 28 21 14 7 0 V G S =4.5V V G S =10V 1 9 18 27 36 45 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D410S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 54 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=10A Is , S ource-drain current (A) 45 10.0 125 C 25 C R DS (on) (m ) i 36 125 C 27 18 75 C 9 0 25 C 75 C 1.0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D410S 900 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =20V ID=10A 750 C is s C , C apacitance (pF ) 600 450 300 C os s 150 C rs s 0 0 5 10 15 20 25 30 6 0 3 6 9 12 15 18 21 24 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 220 S witching T ime (ns ) Tr 150 100 10 ID, Drain C urrent (A) RD S 100 60 10 ( ) ON L im it 1m 10 m 10 0m s 1s s s T D(off) Tf T D(on) 1 DC 1 1 V DS =15V ,ID=1A V G S =10V 6 10 60 100 300 600 0.1 0.1 V G S =10V S ingle P ulse T c=25 C 1 10 30 60 R g, G ate R es is tance (i ) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 2 F igure 12. Maximum S afe O perating Area r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U/D410S 6 S T U/D410S 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF . 0.090 82 56 6 0.024 BSC 398 0.064 33 REF . 7 S T U/D410S TO-252 Tape and Reel Data TO-252 Carrier Tape UNIT: PACKAGE TO-252 (16 A0 6.80 0.1 B0 10.3 0.1 K0 2.50 0.1 D0 2 D1 1.5 + 0.1 -0 E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8. 0 0.1 P1 4. 0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252 Reel S UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2. 2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R V 8 |
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