View HFD4N50_4757683.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HFD4N50 / HFU4N50
July 2005
BVDSS = 500 V
HFD4N50 / HFU4N50
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on)
typ =
2.0
ID = 2.6 A
D-PAK
2 1 1 3 2 3
I-PAK
HFD4N50
HFU4N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25 unless otherwise specified
Parameter
Value 500
Units V A A A V mJ A mJ V/ns W W W/
- Continuous (TC = 25) - Continuous (TC = 100) - Pulsed
(Note 1)
2.6 1.64 10.4 30
(Note 2) (Note 1) (Note 1) (Note 3)
440 2.6 4.5 4.5 2.5 45 0.36 -55 to +150 300
Total Power Dissipation (TA=25) * Power Dissipation (TC = 25) - Derate above 25
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Resistance Characteristics
Symbol RJC RJA RJA Junction-to-Case Junction-to-Ambient* Junction-to-Ambient Parameter Typ. ---Max. 2.78 50 110 /W Units
* When mounted on the minimum pad size recommended (PCB Mount)
SEMIHOW REV.A0,July 2005
HFD4N50 / HFU4N50
Electrical Characteristics TC=25 C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 1.3 A 2.5 --2.0 4.5 2.7 V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.38 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---450 70 10 590 90 17
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 250 V, ID = 3.4 A, RG = 25
--------
15 70 30 40 13 4.0 6.0
30 140 60 80 17 ---
nC nC nC
VDS = 400 V, ID = 3.4 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 2.6 A, VGS = 0 V IS = 3.4 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------220 1.3 2.6 10.4 1.4 --A V C
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=68mH, IAS=3.4A, VDD=50V, RG=25, Starting TJ =25C 3. ISD2.6A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,July 2005
HFD4N50 / HFU4N50
Typical Characteristics
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
RDS(ON)[], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
900 800 700
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 100V
10
VDS = 250V VDS = 400V
Capacitances [pF]
600 500 400 300 200 100 0 -1 10
Ciss Coss
8
6
Crss
Note ; 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 3.4A
10
0
10
1
0
0
2
4
6
8
10
12
14
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,July 2005
HFD4N50 / HFU4N50
Typical Characteristics
(continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
RDS(ON), (Normalized) Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
3.0
Figure 8. On-Resistance Variation vs Temperature
10
1
Operation in This Area is Limited by R DS(on)
10 s
2.5
ID, Drain Current [A]
ID, Drain Current [A]
103
100 s 1 ms
100
2.0
10 ms 100 ms DC
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
1.5
1.0
0.5
10-1 100
101
102
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
Z JC Thermal Response (t),
D=0.5
10
0
0.2 0.1 0.05
10
-1
Notes : (t) W 1. Z JC = 2.78 / Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z JC (t)
0.02 0.01 single pulse
PDM t1
-3
t2
10
0
10
-5
10
-4
10
10
-2
10
-1
10
1
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,July 2005
HFD4N50 / HFU4N50
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
SEMIHOW REV.A0,July 2005
HFD4N50 / HFU4N50
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
SEMIHOW REV.A0,July 2005
HFD4N50 / HFU4N50
Package Dimension
TO-252
6.60.2 5.350.15
2.30.1 0.50.05
5.60.2
2.70.3
10.2
9.7+0.5 -0.3
1.20.3 0.05+0.1 -0.05 0.80.2 0.60.2 2.3typ 2.3typ 0.5+0.1 -0.05
SEMIHOW REV.A0,July 2005
1.20.3
HFD4N50 / HFU4N50
TO-251
6.60.2 5.350.15
2.30.1 0.50.05
0.80.15
7.50.3
0.750.15
5.60.2
70.2
0.60.1 2.3typ 2.3typ
0.5+0.1 -0.05 1.20.3
SEMIHOW REV.A0,July 2005

▲Up To Search▲

Price & Availability of HFD4N50

	To Download HFD4N50 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .