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APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200ns N-Channel FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO -2 47 D3PAK APT18F60B APT18F60S D Single die FREDFET G S FEATURES * Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 19 12 65 30 495 9 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw 1.1 Microsemi Website - http://www.microsemi.com Min Typ Max 335 0.37 Unit W C/W 0.15 -55 150 C 300 050-8158 Rev C 5-2009 oz g in*lbf N*m Static Characteristics Symbol VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS TJ = 25C unless otherwise specified Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 9A VGS = VDS, ID = 1mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C APT18F60B_S Typ 0.57 .31 4 -10 Max Unit V V/C V mV/C A nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 600 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 2.5 0.37 5 250 1000 100 VGS = 30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25C unless otherwise specified Test Conditions VDS = 50V, ID = 9A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 17 3550 36 325 175 Max Unit S pF VGS = 0V, VDS = 0V to 400V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 9A, VDS = 300V Resistive Switching VDD = 400V, ID = 9A RG = 4.7 6 , VGG = 15V 90 90 19 37 20 23 60 18 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 19 Unit G S A 65 1.0 200 380 V ns C A 20 V/ns ISD = 9A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 9A 3 diSD/dt = 100A/s VDD = 100V TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 9A, di/dt 1000A/s, VDD = 400V, TJ = 125C 175 315 0.65 1.56 6.7 9.2 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 12.2mH, RG = 25, IAS = 9A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 050-8158 Rev C 5-2009 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT18F60B_S 60 V GS 25 = 10V T = 125C TJ = -55C J V 50 ID, DRAIN CURRENT (A) 40 TJ = 25C GS = 7 &,8V 20 ID, DRIAN CURRENT (A) 15 6V 30 20 10 TJ = 125C TJ = 150C 10 5.5V 5 5V 4.5V 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 NORMALIZED TO VGS = 10V @ 9A 65 60 55 ID, DRAIN CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0 TJ = -55C TJ = 25C TJ = 125C VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 2.5 2.0 1.5 1.0 0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 30 TJ = -55C TJ = 25C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 5,000 Ciss 1000 25 gfs, TRANSCONDUCTANCE 20 TJ = 125C 15 C, CAPACITANCE (pF) 10 100 Coss 5 0 10 Crss 0 0 5 10 15 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current ID = 9A 20 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 16 VGS, GATE-TO-SOURCE VOLTAGE (V) ISD, REVERSE DRAIN CURRENT (A) 14 12 VDS = 120V 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 TJ = 150C TJ = 25C 10 VDS = 300V 8 6 4 2 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 VDS = 480V 050-8158 Rev C 5-2009 APT18F60B_S 100 100 IDM IDM ID, DRAIN CURRENT (A) 10 ID, DRAIN CURRENT (A) 10 Rds(on) 13s 100s 1ms 10ms 13s 100s 1 Rds(on) 1ms 10ms 100ms DC line 1 TJ = 150C TC = 25C 100ms DC line 0.1 TJ = 125C TC = 75C Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 0.1 C 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1 0.40 0.35 0.30 0.7 0.25 0.20 0.15 0.3 0.10 SINGLE PULSE 0.05 0 10-5 0.1 0.05 10-4 0.5 Note: ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 PDM t1 t2 t1 = Pulse Duration Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 TO-247 (B) Package Outline e3 100% Sn Plated 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D3PAK Package Outline Drain (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 1.04 (.041) 1.15(.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 050-8158 Rev C 5-2009 Gate Drain Source Heat Sink (Drain) and Leads are Plated 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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