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DMN3730UFB4
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 460m @ VGS= 4.5V 30V 560m @ VGS= 2.5V 0.7A ID TA = 25C 0.9A
Features and Benefits
* * * * * * * * 0.4mm ultra low profile package for thin application 2 0.6mm package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) "Lead Free", RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * Load switch Portable applications Power Management Functions
Mechanical Data
* * * * * Case: DFN1006H4-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate)
Drain
DFN1006H4-3
Body Diode Gate
S D G
ESD PROTECTED TO 2kV
Gate Protection Diode
Source
Bottom View
Top View
Equivalent Circuit
Ordering Information (Note 3)
Part Number DMN3730UFB4-7 DMN3730UFB4-7B
Notes:
Marking NF NF
Reel size (inches) 7 7
Tape width (mm) 8 8
Quantity per reel 3000 10,000
1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NF
NF = Product Type Marking Code Dot Denotes Drain Side
DMN3730UFB4
Document number: DS35017 Rev. 3 - 2
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(c) Diodes Incorporated
DMN3730UFB4
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 5) VGS = 4.5V TA = 70C (Note 5) (Note 4) (Note 6) Symbol VDSS VGSS ID IDM Value 30 8 0.91 0.73 0.75 3 Unit V
A
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range (Note 5) (Note 4) (Note 5) (Note 4) Symbol PD RJA TJ, TSTG Value 0.69 0.47 180 258 -55 to +150 Unit W C/W C
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 7) Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS(on) |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf
Min 30 0.45 40 -
Typ 0.7 64.3 6.1 4.5 70 1.6 0.2 0.2 3.5 2.8 38 13
Max 1 3 0.95 460 560 730 1.2 -
Unit V A A V m mS V pF pF pF nC nC nC ns ns ns ns
Test Condition VGS = 0V, ID = 10A VDS = 30V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VGS = 1.8V, ID = 75mA VDS = 3V, ID = 10mA VGS = 0V, IS = 300mA VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A
VDS = 10V, ID = 1A VGS = 10V, RG = 6
4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in steady-state condition. 5. Same as note 4, except the device measured at t 10 sec. 6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10s. 7. Measured under pulsed conditions to minimize self-heating effect. Pulse width 300s; duty cycle 2% 8. For design aid only, not subject to production testing.
DMN3730UFB4
Document number: DS35017 Rev. 3 - 2
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December 2010
(c) Diodes Incorporated
DMN3730UFB4
2.0
VGS = 10V VGS = 4.5V VGS = 3.0V
2.0
VDS = 5V
ID , DRAIN CURRENT (A)
VGS = 2.0V VGS = 1.5V
ID, DRAIN CURRENT (A)
1.5
VGS = 2.5V
1.5
1.0
1.0
0.5
0.5
TA = 150C TA = 125C TA = 85C T A = 25C TA = -55C
0
0
1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic
5
0 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.8
0.8
VGS = 4.5V
0.6
0.6
T A = 150C T A = 125C TA = 85C
VGS = 1.8V
0.4
VGS = 2.5V VGS = 4.5V
0.4
TA = 25C
0.2
0.2
TA = -55C
0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2
0 0 0.25 0.5 0.75 1 1.25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5
RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
VGS = 4.5V ID = 1.0A
1.4
VGS = 2.5V ID = 500mA
RDSON , DRAIN-SOURCE ON-RESISTANCE ()
1.6
0.8
0.6
1.2
0.4
VGS = 2.5V ID = 500mA
1.0
VGS = 4.5V ID = 1.0A
0.2
0.8
0.6 -50
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
-25
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
DMN3730UFB4
Document number: DS35017 Rev. 3 - 2
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December 2010
(c) Diodes Incorporated
DMN3730UFB4
1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V)
2.0
1.0
IS, SOURCE CURRENT (A)
1.6
TA = 25C
0.8
ID = 1mA
1.2
0.6
ID = 250A
0.8
0.4
0.2
0.4
0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100
Ciss
0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2
10,000
IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
1,000
TA = 150C
TA = 125C
10
Crss
Coss
100
TA = 85C
10
TA = 25C
f = 1MHz
1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30
1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30
8
VGS, GATE-SOURCE VOLTAGE (V)
6
VDS = 15V ID = 1A
4
2
0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics 3
DMN3730UFB4
Document number: DS35017 Rev. 3 - 2
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DMN3730UFB4
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05 D = 0.9 RJA (t) = r(t) * R JA RJA = 253C/W P(pk)
D = 0.02
0.01 D = 0.01
t1
D = 0.005 D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
A
A1 D
b1 E b2 e
DFN1006H4-3 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
C X1 X G2
G1 Y Z
Dimensions Z G1 G2 X X1 Y C
Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7
DMN3730UFB4
Document number: DS35017 Rev. 3 - 2
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December 2010
(c) Diodes Incorporated
DMN3730UFB4
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMN3730UFB4
Document number: DS35017 Rev. 3 - 2
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December 2010
(c) Diodes Incorporated

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