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| NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEP31 Series HEP31/HEP31A/HEP31B/HEP31C(c) APPLICATIONS MediuiPower Linear switching Applications. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T TO-220AB T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation Tc=25ae----------(c) 40W PCCollector Dissipation Ta=25ae (c)----------2W VC BO Collector-Base Voltage CEOCollector-Emitter Voltage V 1D Base B HEP31-----------40V 2D Collector C HEP31A----------60V 3D Emitter E HEP31B----------80V HEP31C---------100V VE B O Emitter - Base Voltage-----------5V ICCollector Current DC(c) ------------ - 3A ICCollector Current Pulse(c)----------- 5A -Ib Base Current -----------------1A ELECTRICAL CHARACTERISTICS a=25ae(c) T Characteristics Collector-Emitter Breakdown Voltage Min Typ Max Unit V V V V mA mA |I A |I A |I A |I A Test Conditions IC=30mA, IB=0 HEP31 40 HEP31A 60 HEP31B 80 HEP31C 100 HEP31/ HEP31A HEP31B/ HEP31C HEP31 HEP31A HEP31B HEP31C 25 10 Symbol BVCEO ICEO ICES Collector Cut-off Current Collector Cut-off Current 0.3 0.3 200 200 200 200 50 HFE 1(c) HFE 2(c) VCE(sat) VBE(ON) IEBO fT *DC Current Gain *Collector- Emitter Saturation Voltage *Base-Emitter On Voltage Emitter Cut-off Current Current Gain-Bandwidth Product 3.0 1.2 1.8 1 V V mA MHz VCB=30V, IB=0 VCB=60V, IB=0 VCE=40V, VEB=0 VCE=60V, VEB=0 VCE=80V, VEB=0 VCE=100V, VEB=0 VCE=4V, IC=1A VCE=4V, IC=3A IC=3A, IB =375mA VCE=4V, IC=3A VEB=5V, IC=0 VCE=10V, IC=500mA f=1MHz *Pulse Test 300|I cycle PWU s Duty U 2% NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEP31 Series HEP31/HEP31A/HEP31B/HEP31C(c) |
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