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Depletion Mode MOSFET IXTA3N50D2 IXTP3N50D2 VDSX ID(on) RDS(on) = > 500V 3A 1.5 N-Channel TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Ratings 500 20 30 125 - 55 ... +150 150 - 55 ... +150 V V V W C C C C C Nm/lb.in. g g G = Gate S = Source G S D (Tab) TO-220AB (IXTP) G 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 DS D (Tab) D = Drain Tab = Drain Features * Normally ON Mode * International Standard Packages * Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250A VDS = 25V, ID = 250A VGS = 20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 1.5A, Note 1 VGS = 0V, VDS = 25V, Note 1 3 TJ = 125C Characteristic Values Min. Typ. Max. 500 - 2.0 - 4.0 V V Applications * * * * * * Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads * Easy to Mount * Space Savings * High Power Density 100 nA 5 A 50 A 1.5 A (c) 2009 IXYS CORPORATION, All Rights Reserved DS100148B(12/09) IXTA3N50D2 IXTP3N50D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 0.50 VGS = 5V, VDS = 250V, ID = 1.5A Resistive Switching Times VGS = 5V, VDS = 250V, ID = 1.5A RG = 3.3 (External) VGS = -10V, VDS = 25V, f = 1MHz VDS = 30V, ID = 1.5A, Note 1 Characteristic Values Min. Typ. Max. 1.3 2.1 1070 102 24 27 71 56 42 40 5 20 S pF pF pF ns ns ns ns nC nC nC 1.00 C/W C/W Dim. A b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 0 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 0.13 Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .005 Gate Drain Source Drain Bottom Side 1. 2. 3. 4. TO-263 (IXTA) Outline Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 400V, ID = 0.19A, TC = 75C, Tp = 5s Characteristic Values Min. Typ. Max. 75 W TO-220 (IXTP) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD trr IRM QRM IF = 3A, VGS = -10V, Note 1 IF = 3A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 340 10.9 1.86 1.3 V ns A C Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA3N50D2 IXTP3N50D2 Fig. 1. Output Characteristics @ T J = 25C 3.0 VGS = 5V 3V 2V 1V 16 14 12 2V 0V 1.5 VGS = 5V 3V Fig. 2. Extended Output Characteristics @ T J = 25C 2.5 ID - Amperes 2.0 ID - Amperes 10 8 6 4 1V 1.0 -1V 0V 0.5 -1V -2V -3V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2 0 0 5 10 15 20 -2V 25 30 0.0 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C 3.0 VGS = 5V 2V 1V 0V 2.0 1.E-02 1.E+00 Fig. 4. Drain Current @ T J = 25C VGS = - 2.50V 1.E-01 2.5 - 2.75V - 3.00V ID - Amperes 1.5 -1V ID - Amperes - 3.25V - 3.50V - 3.75V 1.E-03 1.0 -2V 0.5 -3V 0.0 0 1 2 3 4 5 6 7 1.E-04 1.E-05 - 4.00V 1.E-06 0 100 200 300 400 500 600 VDS - Volts VDS - Volts Fig. 5. Drain Current @ T J = 100C 1.E+00 1.E+08 Fig. 6. Dynamic Resistance vs. Gate Voltage VDS = 350V - 100V 1.E+07 VGS = -2.75V 1.E-01 -3.00V ID - Amperes 1.E-02 -3.50V R O - Ohms -3.25V 1.E+06 1.E+05 TJ = 25C TJ = 100C -3.75V 1.E-03 1.E+04 -4.00V 1.E-04 1.E+03 0 100 200 300 400 500 600 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 VDS - Volts VGS - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved IXTA3N50D2 IXTP3N50D2 Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 2.4 2.2 VGS = 0V I D = 1.5A 2.6 3.0 VGS = 0V 5V - - - TJ = 125C Fig. 8. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current R DS(on) - Normalized R DS(on) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 2.2 1.8 1.4 TJ = 25C 1.0 0.6 0 1 2 3 4 5 6 7 8 9 10 TJ - Degrees Centigrade ID - Amperes Fig. 9. Input Admittance 10 9 8 7 6 5 4 3 2 1 0 -3.5 0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1 2 TJ = 125C 25C - 40C VDS = 30V 5 6 VDS = 30V Fig. 10. Transconductance TJ = - 40C 25C g f s - Siemens 4 125C ID - Amperes 3 2 1 3 4 5 6 7 8 9 10 VGS - Volts ID - Amperes Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 1.4 10 9 1.3 8 7 VGS = -10V Fig. 12. Forward Voltage Drop of Intrinsic Diode BV / VGS(off) - Normalized 1.2 IS - Amperes VGS(off) @ VDS = 25V 6 5 4 3 2 1 TJ = 25C TJ = 125C 1.1 BVDSX @ VGS = - 5V 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 0 0.4 0.5 0.6 0.7 0.8 0.9 TJ - Degrees Centigrade VSD - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA3N50D2 IXTP3N50D2 Fig. 13. Capacitance 10,000 5 Fig. 14. Gate Charge 4 3 VDS = 250V I D = 1.5A I G = 10mA f = 1 MHz Capacitance - PicoFarads Ciss 1,000 2 VGS - Volts 1 0 -1 -2 -3 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 -4 -5 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area @ T C = 25C 100.0 100.0 Fig. 16. Forward-Bias Safe Operating Area @ T C = 75C RDS(on) Limit 10.0 10.0 RDS(on) Limit ID - Amperes ID - Amperes 25s 100s 25s 100s 1.0 TJ = 150C TC = 75C Single Impedance Thermal Pulse 10 100 1.0 TJ = 150C TC = 25C Single Pulse DC 1ms 10ms 100ms 1ms 10ms 100ms DC 1,000 Fig. 17. Maximum Transient 0.1 100 1,000 10.00 0.1 10 VDS - Volts VDS - Volts Fig. 17. Maximum Transient Thermal Impedance 2.00 1.00 Z (th)JC - C / W 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N50D2(3C)8-17-09-A |
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