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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB703 DESCRIPTION *With TO-220C package *Complement to type 2SD743 *High power dissipation APPLICATIONS *Designed for use in audio frequency power amplifier,low speed switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 -6 -1 40 150 -55~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-1.0mA; IE=0 IE=-1.0mA; IC=0 IC=-3A;IB=-0.3A IC=-3A;IB=-0.3A VCB=-80V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-500mA ; VCE=-5V IC=-100mA ; VCE=-5V,f=1MHz 30 40 10 MIN -80 -80 -5 2SB703 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V -2.0 -2.0 -10 -10 V V A A 200 MHz hFE-2 Classifications S 40-80 R 60-120 Q 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB703 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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