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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB703 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) *DC Current Gain: hFE= 40~200 @IC= -0.5A *Complement to Type 2SD743 APPLICATIONS *Designed for use in audio frequency power amplifier, low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range ww w scs .i VALUE -80 -80 -5 -4 -6 -1 40 150 -55~150 UNIT V V .cn mi e V A A A PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 3.125 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB703 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A B ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product w w Q 100-200 w. sem isc VCB= -80V; IE= 0 VEB= -3V; IC= 0 IC= -20mA; VCE= -5V IC= -0.5A; VCE= -5V .cn i 30 40 10 -2.0 V -10 A -10 A 200 IC= -0.1A; VCE= -5V; ftest= 1.0MHz MHz hFE-2 Classifications S 40-80 R 60-120 isc Websitewww.iscsemi.cn 2 |
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