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Preliminary Datasheet
RJK2511DPK
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance Low leakage current High speed switching REJ03G1486-0500 Rev.5.00 Jun 30, 2010
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP Note3 EAR Pch Note2 ch-c Tch Tstg
Note1
Ratings 250 30 65 200 65 200 22 30.2 200 0.625 150 -55 to +150
Unit V V A A A A A mJ W C/W C C
REJ03G1486-0500 Rev.5.00 Jun 30, 2010
Page 1 of 6
RJK2511DPK
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 250 -- -- 3.0 30 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 51 0.028 4900 690 85 52 200 160 150 120 28 51 0.93 200 1.5 Max -- 1 0.1 4.5 -- 0.034 -- -- -- -- -- -- -- -- -- -- 1.50 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 32.5 A, VDS = 10 V Note4 ID = 32.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 32.5 A VGS = 10 V RL = 3.9 Rg = 10 VDD = 200 V VGS = 10 V ID = 65 A IF = 65 A, VGS = 0 Note4 IF = 65 A, VGS = 0 diF/dt = 100 A/s
REJ03G1486-0500 Rev.5.00 Jun 30, 2010
Page 2 of 6
RJK2511DPK
Preliminary
Main Characteristics
Power vs. Temperature Derating
400
Maximum Safe Operation Area
1000 300 Ta = 25C
10 s PW 10 0 (1 = 1 s sh ot) ms
Channel Dissipation Pch (W)
300
Drain Current ID (A)
100 30 10
200
3 Operation in this 1 area is limited by
RDS(on)
100
0.3 0.1 0.03 0.01
0
50
100
150
200
1
3
10
30
100
300
1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100
10 V 8V
Typical Transfer Characteristics
100 VDS = 10 V Pulse Test
6.3 V
Drain Current ID (A)
5.9 V 60 5.5 V Pulse Test 20 5V
Drain Current ID (A)
80
80
60
40
40
20
Tc = 75C
VGS = 0 V
0 4 8 12 16 20 0 2 4
25C -25C 6 8 10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source on State Resistance RDS(on) () Drain to Source Saturation Voltage VDS(on) (V)
4 Pulse Test 3
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
0.1 0.05 VGS = 10 V
0.02 0.01 0.005
2
ID = 65 A
1
32.5 A 10 A
0.002 0.001 1 3 10 30 Pulse Test 100 300 1000
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1486-0500 Rev.5.00 Jun 30, 2010
Page 3 of 6
RJK2511DPK
Static Drain to Source on State Resistance vs. Temperature
0.1
Preliminary
Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance |yfs| (S)
VGS = 10 V
100 30 10 3 75C 1 0.3 0.1 0.1 Tc = -25C 25C
Pulse Test ID = 65 A 32.5 A
0.08
0.06
0.04
10 A
0.02 0 -25
VDS = 10 V Pulse Test 0.3 1 3 10 30 100
0
25
50
75
100 125 150
Case Temperature
Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
100000 30000 VGS = 0 f = 1 MHz
Body-Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 5 2 1 0.1 0.3 1.0 di / dt = 100 A / s VGS = 0, Ta = 25C 3 10 30 100
Capacitance C (pF)
10000 3000 1000 300 100 30 10 0 50 100 150 Crss Coss Ciss
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
Drain to Source Voltage VDS (V)
ID = 65 A 300 VDD = 200 V 100 V 50 V VDS VGS 12
Gate to Source Voltage VGS (V)
400
16
10000
Switching Time t (ns)
VGS = 10 V, VDD = 125 V PW = 5 s, duty 1 % RG = 10 tf td(off) tr tf td(off)
1000
200
8
100
VDD = 200 V 100 V 50 V 40 80 120 160
4
100 t d(on) tr 10 0.1
0 0 200
0.3
1
3
10
30
100
Gate Charge Qg (nC)
Drain Current ID (A)
REJ03G1486-0500 Rev.5.00 Jun 30, 2010
Page 4 of 6
RJK2511DPK
Reverse Drain Current vs. Source to Drain Voltage
100 5
Preliminary
Gate to Source Cutoff Voltage vs. Case Temperature
VDS = 10 V ID = 10 mA 4 1 mA 3
Reverse Drain Current IDR (A)
80
60
Gate to Source Cutoff Voltage VGS(off) (V)
40
10 V VGS = 0 V 5V Pulse Test
2 0.1 mA 1 0 -25
20
0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance s (t)
Case Temperature Tc (C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
ch - c (t) = s (t) * ch - c
0.1
ch - c = 0.625C/W, Tc = 25C PDM
tp uls e
0.05
D=
PW T
0.03 0.02
0.0 1
1 o sh
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S) Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 125V 90% 90% td(off) tf Vin Vout 10% 10% 10% Vout Monitor
Waveform
90%
td(on)
tr
REJ03G1486-0500 Rev.5.00 Jun 30, 2010
Page 5 of 6
RJK2511DPK
Preliminary
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part No. RJK2511DPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container
REJ03G1486-0500 Rev.5.00 Jun 30, 2010
0.3
Page 6 of 6
Notice
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