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| SILICON NPN TRANSISTOR 2N3700CSM * * * * High Voltage, Medium Power Silicon Planar NPN Transistor Hermetic Ceramic Surface Mount Package (SOT23 Compatible) High Reliability Screening Options Available CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Power Dissipation at TA = 25C Derate Above TA = 25C Junction Temperature Range Storage Temperature Range 140V 80V 7.0V 1.0A 0.5W 2.9mW/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols RJA Parameters Thermal Resistance, Junction To Ambient Min. Typ. Max. 350 Unit C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 5594 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com SILICON NPN TRANSISTOR 2N3700CSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols V(BR)CEO IEBO ICES (1) Parameters Collector-Emitter Breakdown Voltage Emitter-Base Cut-Off Current Collector-Emitter Cut-Off Current Test Conditions IC = 30mA VEB = 7.0V VEB = 5.0V VCE = 90V TA = 150C IB = 0 IC = 0 IC = 0 Min. 80 Typ. Max. Unit V 10 10 10 5 10 50 90 100 40 50 15 0.2 0.5 1.1 300 A nA ICBO Collector-Base Cut-Off Current VCB = 140V IC = 0.10mA IC = 10mA IE = 0 VCE = 10V VCE = 10V VCE = 10V TA = -55C A hFE (1) DC Current Gain IC = 150mA IC = 500mA IC = 1.0A VCE(sat) VBE(sat) (1) VCE = 10V VCE = 10V IB = 15mA IB = 50mA IB = 15mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 150mA IC = 500mA IC = 150mA V (1) DYNAMIC CHARACTERISTICS |hfe| Magnitude of Small-Signal Short-Circuit Current Gain Small-Signal Short-Circuit Current Gain Output Capacitance IC = 50mA f = 20MHz IC = 1.0mA f = 1.0KHz VCB = 10V f = 1.0MHz VEB = 0.5V f = 1.0MHz IC = 0 IE = 0 VCE = 5.0V 80 400 VCE = 10V 4 5 20 hfe Cobo Cibo 12 pF Input Capacitance 60 pF Notes (1) Pulse Width 300us, 2% Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5594 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR 2N3700CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 0.10 (0.02 0.004) 1.02 0.10 (0.04 0.004) R0.31 (0.012) 3 2.54 0.13 (0.10 0.005) 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 0.76 0.15 (0.03 0.006) 0.31 rad. (0.012) 1.40 (0.055) max. LCC1 (Underside View) Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5594 Issue 2 Page 3 of 3 |
Price & Availability of 2N3700CSM
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