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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX39 www..com DESCRIPTION *With TO-3 package *High current ,high speed APPLICATIONS *For switching amplifiers,power gates, switching regulators,switching circuits converters,inverters and control circuits PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 90 7 30 40 6 120 150 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.46 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A; IB=0;L=25mH IE=50mA; IC=0 IC=12 A;IB=1.2 A IC=20 A;IB=2.5 A IC=20 A;IB=2.5 A VCE=120V; VBE=-1.5V TC=125 VCE=70V; IE=0 VEB=5V; IC=0 IC=12A ; VCE=4V IC=20A ; VCE=4V IC=1A ; VCE=15V 15 8 8 MIN 90 7 www..com BUX39 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V 0.7 1.25 2.1 1.2 1.6 2.5 1.0 5.0 1.0 1.0 45 V V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=20A ;IB1=-IB2=-2.5A VCC=30V 0.80 0.55 0.15 1.5 1.0 0.3 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BUX39 Fig.2 Outline dimensions 3 |
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