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| www..com SUP/SUB85N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.004 @ VGS = 10 V ID (A) 85 a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View Ordering Information SUP85N04-04 SUP85N04-04--E3 (Lead (Pb)-Free) DS S Ordering Information SUB85N04-04 SUB85N04-04--E3 (Lead (Pb)-Free) N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C www..com Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 20 85a 85a 240 70 211 250c 3.75 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient J ti t A bi t Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71125 S-41261--Rev. C, 05-Jul-04 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W C/W 1 www. .com www..com SUP/SUB85N04-04 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VDS = 15 V, ID = 30 A 30 120 0.0031 0.004 0.0055 0.007 S W 40 2 4 100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs VDS = 30 V, VGS = 10 V, ID = 85 A , , Qgd tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1 MHz 7620 1325 710 160 40 55 20 35 175 115 130 ns 250 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec www..com td(on) VDD = 30 V, RL = 0.47 W ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W IS ISM VSD trr IRM(REC) Qrr IF = 85 A, VGS = 0 V IF = 85 A, di/dt = 100 A/ A A/ms 115 75 85 Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 85 240 1.1 60 2.6 0.08 1.4 90 4 0.15 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71125 S-41261--Rev. C, 05-Jul-04 www. .com www..com SUP/SUB85N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 7 V 200 I D - Drain Current (A) 6V I D - Drain Current (A) 200 250 Transfer Characteristics 150 150 100 100 TC = 125_C 50 25_C -55_C 0 50 5V 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Transconductance 250 TC = -55_C 25_C 125_C r DS(on) - On-Resistance ( W ) 200 g fs - Transconductance (S) 0.004 0.005 On-Resistance vs. Drain Current 150 www..com 0.003 0.002 0.001 0.000 0 20 40 60 80 100 120 0 20 40 60 VGS = 10 V 100 50 0 80 100 120 ID - Drain Current (A) ID - Drain Current (A) 12000 10000 C - Capacitance (pF) 8000 6000 4000 Coss 2000 0 0 Crss 8 Capacitance 20 VDS = 30 V ID = 85 A Gate Charge V GS - Gate-to-Source Voltage (V) 16 Ciss 12 8 4 0 16 24 32 40 0 60 120 180 240 300 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) www.vishay.com Document Number: 71125 S-41261--Rev. C, 05-Jul-04 3 www. .com www..com SUP/SUB85N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.0 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S - Source Current (A) Source-Drain Diode Forward Voltage 1.6 rDS(on) - On-Resiistance (Normalized) 1.2 10 TJ = 150_C 0.8 0.4 TJ = 25_C 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 55 100 I Dav (a) www..com 51 ID = 250 mA V (BR)DSS (V) IAV (A) @ TA = 25_C 47 IAV (A) @ TA = 150_C 43 10 1 39 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) 35 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71125 S-41261--Rev. C, 05-Jul-04 www. .com www..com SUP/SUB85N04-04 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 1000 Safe Operating Area 80 I D - Drain Current (A) I D - Drain Current (A) 10 ms 100 Limited by rDS(on) 100 ms 1 ms 10 ms 100 ms dc 60 10 40 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Normalized Thermal Transient Impedance, Junction-to-Case www..com 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 71125 S-41261--Rev. C, 05-Jul-04 www.vishay.com 5 www. .com |
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