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 SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
2SC2167
DESCRIPTION *With TO-220 package *High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS *Power amplifier applications *TV vertical deflection applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 150 150 6 2 3 30 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=0.5mA ;IE=0 IE=0.5mA ;IC=0 IC=0.5A ;IB=50m A VCB=150V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=10V 50 MIN 150 150 6
2SC2167
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V V
1.0 10 10
V A A
20
MHz
2
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2167
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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