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 FUO 50-16N
Three Phase Rectifier Bridge
in ISOPLUS i4-PACTM
1 3 4 5
VRRM = 1600 V ID(AV)M = 50 A IFSM = 200 A
1
2
5 Features
Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM Ptot Symbol TC = 90C; sine 180 (per diode) TC = 90C TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C Conditions (per diode) Conditions Maximum Ratings 1600 20 50 200 60 V A A A W
* rectifier diodes for line frequency * ISOPLUS i4-PACTM package - isolated back surface - UL registered E 72873 - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline Applications * three phase mains rectifiers Dimensions in mm (1 mm = 0.0394")
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. TVJ = 25C TVJ = 125C 1.1 1.1 0.2 3.2 1.3 10 V V A mA
VF IR RthJC RthJH Component Symbol TVJ Tstg VISOL FC Symbol Cp dS,dA dS,dA Weight
IF = 20 A;
VR = VRRM; TVJ = 25C VR = 0.8*VRRM; TVJ = 125C (per diode)
2.1 K/W K/W
Conditions
Maximum Ratings -55...+150 -55...+125 C C V~ N
IISOL 1 mA; 50/60 Hz mounting force with clip Conditions coupling capacity between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5
2500 20...120
Characteristic Values min. typ. max. 40 pF mm mm 9 g
448
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
1-2
FUO 50-16N
60 350 1000
A
50 IF 40 30
A
300 IFSM 250 f = 50 Hz 200 VR = 0.8VRRM 150 It
2
VR = 0 V
A2s
TVJ = 25C
TVJ = 45C
20 10 0 0.0 TVJ=125C TVJ= 25C
TVJ = 125C 100 TVJ = 125C 50 0 0.001 100 0.01 t 0.1 s 1 1 t ms 10
0.5
1.0 VF
1.5 V
2.0
Fig. 1 Forward current vs. voltage drop per leg
Fig. 2 Surge overload current
Fig. 3 t versus time per diode
180 160 W 140 Ptot 120 100 80 60 40 RthHA [K/W] 0.2 0.5 1 1.5 2 3 5
60
A
50 Id(AV)M 40 30 20 10
20 0 0 10 20 30 Id(AV)M 40 A 0 30 60 TA 90 120 C 150 0 0 40 80 120 C 160
TH
Fig. 5 Max. forward current vs. case temperature Id(AVM) = f (Tcase)
Fig. 4 Power dissipation versus direct output current and ambient temperature; sinusoidal 120
2.5 K/W 2.0 ZthJC 1.5
Constants for ZthJc calculation
1.0
i 1 2 3 4
0.01 0.1 1 t 10 s
Rthi (K/W) 1.159 0.1286 0.2651 0.5473
ti (s) 0.1015 0.1026 0.4919 0.62
0.5
0.0 0.001
Fig. 6 Transient thermal impedance junction to case Zthjc
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
2-2
448


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