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| SIE802DF New Product Vishay Siliconix www..com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID VDS (V) 30 FEATURES (A)a Package Limit 60 60 rDS(on) (W)e 0.0019 @ VGS = 10 V 0.0026 @ VGS = 4.5 V Silicon Limit 202 173 Qg (Typ) 50 nC Package Drawing PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 D TrenchFETr Gen II Power MOSFET D Ultra Low Thermal Resistance Using Top-Exposed PolarPAKr Package for RoHS COMPLIANT Double-Sided Cooling D Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size D Low Qgd/Qgs Ratio Helps Prevent Shoot-Through D 100% Rg and UIS Tested APPLICATIONS D VRM D DC/DC Conversion: Low-Side D Synchronous Rectification D D S G D D D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 G Bottom View S N-Channel MOSFET For Related Documents Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SIE802DF-T1--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C) 150 C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain Single Pulse Avalanche Current Avalanche Energy L = 0 1 mH 0.1 TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25_C TA = 25_C IDM IS IAS EAS ID Symbol VDS VGS Limit 30 "20 202 (Silicon Limit) 60a (Package Limit) 60a 42.7b, c 34.2b, c 100 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c -50 to 150 260 Unit V A mJ W _C Notes: a. Package limit is 60 A. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72985 S-52262--Rev. C, 24-Oct-05 www.vishay.com 1 SIE802DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Maximum Junction-to-Case (Source)a, c Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 68 _C/W. c. Measured at source pin (on the side of the package) Steady State t p 10 sec New Product www..com Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.8 2.2 Maximum 24 1 2.7 Unit _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 23.6 A VGS = 4.5 V, ID = 21.3 A VDS = 15 V, ID = 23.6 A 25 0.0016 0.0021 156 0.0019 0.0026 S 1.5 30 32.2 -6.4 2.2 2.7 "100 1 10 mV/_C V nA mA A W V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss VDS = 15 V, VGS = 10 V, ID = 23.6 A Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 10 V, Rg = 1 W VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz VDS = 15 V, VGS = 4.5 V, ID= 23.6 A VDS = 15 V, VGS = 0 V, f = 1 MHz 7000 1200 500 105 50 21 14 1.1 45 195 45 20 25 20 65 10 1.65 70 300 70 30 40 30 100 15 ns W 160 75 nC pF www.vishay.com 2 Document Number: 72985 S-52262--Rev. C, 24-Oct-05 SIE802DF New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Vishay Siliconix www..com Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. IS ISM VSD trr Qrr ta tb IF = 10 A, di/dt = 100 A/ms, TJ = 25 C 25_C IS = 10 A 0.8 55 66 25 30 ns TC = 25_C 60 100 1.2 85 105 A V ns nC Document Number: 72985 S-52262--Rev. C, 24-Oct-05 www.vishay.com 3 SIE802DF Vishay Siliconix New Product www..com TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 20 Transfer Characteristics I D - Drain Current (A) 60 VGS = 10 thru 4 V 40 3V 20 I D - Drain Current (A) 80 16 12 8 TC = 125_C 4 25_C -55_C 0 0.0 0.1 0.2 0.3 0.4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.0025 10000 Capacitance rDS(on) - On-Resistance (W) 0.0023 VGS = 4.5 V 0.0021 C - Capacitance (pF) 8000 Ciss 6000 0.0019 4000 0.0017 VGS = 10 V 2000 Crss Coss 0.0015 0 20 40 60 80 100 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) ID = 23.6 A 8 VDS = 15 V 6 VDS = 24 V 4 rDS(on) - On-Resistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V, 10 V ID = 23.6 A 1.2 1.0 2 0.8 0 0 20 40 60 80 100 120 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72985 S-52262--Rev. C, 24-Oct-05 www.vishay.com 4 SIE802DF New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 100 rDS(on) - Drain-to-Source On-Resistance (W) 0.0040 ID = 23.6 A 0.0035 Vishay Siliconix www..com On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 0.0030 TJ = 150_C 10 0.0025 TA = 125_C 0.0020 TA = 25_C 0.0015 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 0.0010 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 2.6 2.4 ID = 250 mA 2.2 Power (W) VGS(th) (V) 2.0 1.8 1.6 1.4 1.2 -50 10 30 50 Single Pulse Power, Junction-to-Ambient 40 20 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 1000 *Limited by rDS(on) 100 I D - Drain Current (A) 1 ms 10 10 ms 100 ms 1s 0.1 TA = 25_C Single Pulse 10 s dc 1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 72985 S-52262--Rev. C, 24-Oct-05 www.vishay.com 5 SIE802DF Vishay Siliconix New Product www..com TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* 250 140 120 200 Power Dissipation (W) ID - Drain Current (A) 100 80 60 40 20 Package Limited 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Power De-Rating, Junction-to-Case 150 100 50 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 72985 S-52262--Rev. C, 24-Oct-05 SIE802DF New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix www..com Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Normalized Thermal Transient Impedance, Junction-to-Source Normalized Effective Transient Thermal Impedance Single Pulse 0.01 10-4 0.02 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72985. Document Number: 72985 S-52262--Rev. C, 24-Oct-05 www.vishay.com 7 Legal Disclaimer Notice Vishay www..com Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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