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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV28 DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS High frequency and efficiency converters Switching regulators Motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Base current Total power dissipation SEM GE Open base TC=25ae OND IC TOR UC VALUE 400 200 7 10 2 70 150 -65~150 ae ae UNIT V V V A A W Open collector Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.785 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUV28 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30m A ;IB=0 200 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=3A ;IB=0.3 A IC=6A; IB=0.6A 0.7 V Collector-emitter saturation voltage 1.5 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.6A 2.0 V ICBO Collector cut-off current VCB =300V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA Switching times resistive load ton ts Turn-on time Storage time ANG CH tf Fall time IN EMIC ES IC=5A;VCC=150V IB1=-IB1=0.5A; DUC ON TOR 1.0 1.5 |I 0.3 ms s |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV28 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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