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HIGH-VOLTAGE MONOLITHIC IC ECN3061 ECN3061 is a one-chip three-phase bridge inverter IC which has 6 IGBTs in the circuit. Especially, it is very suitable for controlling the speed of three-phase DC brushless motors which are applied to AC100~110V power supplies. Functions l l Package A Charge pump circuit is integrated. Free wheeling diodes are integrated. Features l l l It can be controlled by PWM with 6 inputs from an external microprocessor. 6 logic inputs are compatible with 5V CMOS and LSTTL outputs. 6 IGBTs can be operated in 20kHz chopping frequency. ECN3061SPV VCC(15V) D2 C2 +CB VB VB supply C+ C- D1 + C1 CL VS1 VS2 VS VCC Charge Pump UT VT WT Clock Top Arm Driver Motor MU MV MW Microprocessor UB VB WB Bottom Arm Driver Pulse Generator Clock Hall ICs CR RTR CTR Vref VTR GL GH1 GH1 RS Fig.1 Block Diagram PDE-3061-0 ECN3061 1. General (1) Type (2) Application (3) Structure (4) Package i)ECN3061SP ii)ECN3061SPV iii)ECN3061SPR 3-phase DC brushless motor Monolithic IC SP-23T 2. Maximum Allowable Ratings (Ta=25C) No. Items Symbols Terminal Ratings Unit Condition 1 Output Device VSM VS1,VS2 250 V Breakdown Voltage MU,MV,MW 2 Supply Voltage VCC VCC 18 V 3 Input Voltage VIN UT,VT,WT, V -0.5 ~ VB+0.5 UB,VB,WB 4 Output Current IMDC MU,MV,MW 1.0 A 5 Peak Output Current IMP MU,MV,MW 1.8 A Note 1 6 Output Current in Start IOM MU,MV,MW 1.8 A Note 1 Up and Accelerating 7 Operating Junction Tjop Note 2 C -20 ~ +125 Temperature 8 Storage Temperature Tstg C -40 ~ +150 Note1. Please note that the duty for a period exceeding 1A has to be less than 5% of total current flowing period. Note2. Thermal resistance Rj-c = 4 C/W Rj-a = 40C/W 3. Recommended Operating Conditions No. Items Symbols Terminal MIN TYP MAX Unit Condition 1 Supply Voltage VS VS1,2 90 141 185 V 2 VCC VCC 13.5 15 16.5 V Note 1. Recommended Safe Operating Area(SOA) This IC should be used within the SOA as shown below, where IM and VM are the current and the voltage at the terminals connected to motor coils when the phase is changed (turned off). 1.8 IM (A) Safe Operating Area 0 0 VM (V) 185 PDE-3061-0 ECN3061 4. Electorical Characteristics (Ta=25C) Unless otherwise specified, VCC=15V, VS=141V, Suffix T; Top arm B; Bottom arm No. Items Symbols Terminal MIN 1 Standby Current IS VS1,2 2 ICC VCC 3 Output device FVD VFT MU,MV,MW 4 VFB MU,MV,MW 5 Turn On TdONT MU,MV,MW 6 Delay Time TdONB MU,MV,MW 7 Turn Off TdOFFT MU,MV,MW 8 Delay Time TdOFFB MU,MV,MW 9 Diode FVD VFDT MU,MV,MW 10 VFDB MU,MV,MW 11 Input Voltage VIH UT,VT,WT, 3.5 12 VIL UB,VB,WB 13 Input Current IIL UT,VT,WT, UB,VB,WB 14 VB supply voltage VB CB 6.8 15 VB supply current IB CB 25 Note 1. A pull down resistance is typically 200 k. TYP 4.0 10 2.0 2.0 0.5 0.5 1.0 0.8 2.0 2.2 7.5 MAX 10 20 3 3 3.0 3.0 3.0 3.0 2.5 2.7 1.5 100 8.2 Unit mA mA V V s s s s V V V V A V mA Condition UT,VT,WT,UB,VB, WB=0 I=0.7A I=0.7A Resistance load I=0.7A Input=5V Note 1 Pull down Resistance VLOAD=0.1V PDE-3061-0 ECN3061 5. Function 5.1 Truth Table Terminal UT,VT,WT, UB,VB,WB Input L H Output OFF ON 5.2 Timing Chart UT Top Arm VT WT UB Bottom Arm VB WB MU Output MV Output MW Output PDE-3061-0 ECN3061 6. Standard Application No. Component 1 C0 2 3 C1,C2 D1,D2 Recommended Value More than 0.22F 1.0F 20% Usage for smoothing VB (VB; internal power supply) for a charge pump Hitachi DFG1C4(glass mold) for a charge pump Hitachi DFM1F4(resin mold) or considerable parts 4 CTR for an internal clock Note 1. 1800 pF 5% 5 RTR for an internal clock Note 1. 22 k 5% Note 1. The internal clock frequency is approximately determined by next equation. At recommended value of CR, the error factor of IC is about 10%. fclock = -1 / (2C*R*Ln(1-3.5/5.5)) ; Ln is natural logarithm. = 0.494 / (C*R) (Hz) Remark The stress voltage is 8V. The stress voltage is VCC. 400V/1A trr100ns VCC(15V) D2 C2 +CB VB VB supply C+ C- D1 + C1 CL VS1 VS2 VS VCC Charge Pump UT VT WT Clock Upper Arm Driver Motor MU MV MW Microprocessor UB VB WB Lower Arm Driver Pulse Generator Clock Hall ICs CR RTR CTR Vref VTR GL GH1 GH1 RS PDE-3061-0 ECN3061 7. Terminal 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 MV VS1 MU GH1 UT VT WT N.C. UB VB WB VTR CR CB CL CC+ GL VCC GH2 N.C. MW VS2 * N.C. ; No Connection (Marking Side) Fig.2 Pin Connection 8. i) Package appearance ii) iii) ECN3061SP ECN3061SPV ECN3061SPR PDE-3061-0 ECN3061 9. Package dimensions i)ECN3061SP ii)ECN3061SPV PDE-3061-0 iii)ECN3061SPR 31MAX (30) 28 20 0.5 0.2 0.2 0.3 0.2 3.5 0.3 3.6 0.2 1.26 0.24 14.7MAX 11.2 0.3 12.30.5 2.20.3 1.23 0.25 0.6 0.1 23.970.3 4.90.5 1.27 0.5 2.54 0.5 2.54 0.5 7.10.5 +10 0 -0 1 23 +10 0 -0 0.25 typ 4.1 0.3 (7.7) (9) 3.6 1.8 typ PDE-3061-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse |
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