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PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 - 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6
PTFB192503FL Package H-34288-4/2
Features
VDD = 30 V, IDQ = 1.85 A, = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84MHz
20 19 18 17 16 15 33 35 37 39 41 43 45 47 49 50
Two-carrier WCDMA 3GPP
* * *
Broadband internal input and output matching Enhanced for use in DPD error correction systems Typical two-carrier WCDMA performance, 30 V, 1990 MHz - Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = -35 dBc Typical CW performance, 1990 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55% Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers Integrated ESD protection. Human Body Model, Class 2 (minimum) Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Pb-free, RoHS-compliant
Drain Efficiency (%)
Gain
40 30 20 10 0
Gain (dB)
*
Efficiency
*
* * *
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test
fixture) VDD = 30 V, IDQ = 1.9 A, POUT = 50 W average, 1 = 1980 MHz, 2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8:1 dB @ 0.01% CCDF
Characteristic
Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25C unless otherwise indicated
Symbol
Gps
Min
-- -- --
Typ
19 28 -35
Max
-- -- --
Unit
dB % dBc
hD
IMD
ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 15 Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.9 A, POUT = 220 W PEP, = 1990 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
17 40 --
Typ
18 41.5 -29
Max
-- -- -27
Unit
dB % dBc
hD
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V VDS = 30 V, IDQ = 1.9 A VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.3 --
Typ
-- -- -- 0.03 2.8 --
Max
-- 1.0 10.0 -- 3.3 1.0
Unit
V A A W V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70C, 200 W CW)
Symbol
VDSS VGS TJ TSTG RqJC
Value
65 -6 to +10 200 -40 to +150 0.262
Unit
V V C C C/W
Ordering Information
Type and Version
PTFB192503EL V1 PTFB192503EL V1 R250 PTFB192503FL V2 PTFB192503FL V2 R250
Package Type
H-33288-6 H-33288-6 H-34288-4/2 H-34288-4/2
Package Description
Thermally-enhanced slotted flange, single-ended Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Thermally-enhanced earless flange, single-ended
Shipping
Tray Tape & Reel, 250 pcs Tray Tape & Reel, 250 pcs
Data Sheet
2 of 15
Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.85 A, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84 MHz
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.85 A, = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW 3.84 MHz
-25 -30 -35 1990 1990 1960 1960 1930 1930 Lower Upper Lower Upper Lower Upper
-20 -25
40
IMD Up IMD Low Efficiency
35 30 25 20 15
-30 -35 -40 -45 -50 -55 -60
-40 -45 -50 -55 -60 33
ACPR
10 5 0
35
37
39
41
43
45
47
49
33
35
37
39
41
43
45
47
49
Output Power (dBm)
Output Power (dBm)
Power Sweep, CW Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.85 A, = 1990 MHz
VDD = 30 V, IDQ = 1.85 A, PO UT = 110 W
20 19 65 60 55
Two-tone Broadband Gain, Efficiency & Return Loss vs. Frequency
50 45 40 35 30 25 20 15 1890 1920 1950 1980 2010
-15
Gain (dB)
18 17 16 15 14 38 40 42 44 46 48 50 52 54
45 35
Efficiency
-20 -25
Efficiency
25 15 5
IMD3
-30 -35 -40
Gain
-45 -50
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 15
Rev. 09, 2010-11-09
Return Loss (dB), IMD (dBc)
Gain (dB) / Efficiency (%)
Drain Efficiency (%)
Gain
RL
-5 -10
55
Drain Efficiency (%)
IMD & ACPR (dBc)
IMD (dBc)
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up Two-tone Drive-up
VDD = 30 V, IDQ = 1.85 A, 1 = 1990 MHz, 2 = 1989 MHz
VDD = 30 V, IDQ = 1.85 A, 1 = 1990 MHz, 2 = 1989 MHz
-20 -25 -30 -35
45 40 35
20 19
50
Gain
40 30 20
Efficiency (%)
Gain (dB)
30 25
IMD (dBc)
-40 -45 -50 -55 -60 -65 37 39
18 17
Efficiency
20 15 10
Efficiency
16 15 37 39 41 43 45 47 49 51 53 55 10 0
IMD 3
41 43 45 47 49 51 53 55
5 0
Output Power, PEP (dBm)
Output Power, PEP (dBm)
VDD = 30 V, IDQ = 1.85 A, Tone Spacing = 1 MHz
Two-tone Drive-up at Selected Frequencies
IDQ = 1.85 A, 1 = 1990 MHz, 2 = 1989 MHz Output Power = 53.3 dBm
Two-tone Voltage Sweep
-20
60
-15 -20
Gain (dB) / Efficiency (%)
1930 MHz -30 1960 MHz 1990 MHz -40
IMD (dBc)
Efficiency
40 30 20 10 -25
IMD3
IMD3 Gain
-30 -35 -40
-50
-60 35 40 45 50 55
22
24
26
28
30
32
34
Output Power, PEP (dBm)
Supply Voltage (V)
Data Sheet
4 of 15
Rev. 09, 2010-11-09
3rd Order IMD (dBc)
50
Efficiency (%)
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.85 A, = 1990 MHz
CW Performance Gain vs. Output Power
VDD = 30 V, = 1990 MHz
21 20 19
60 50 40 30 20 10 0 40 45 50 55
20
Gain
Drain Efficiency (%)
IDQ = 2.5 A
Power Gain (dB)
19
Gain (dB)
IDQ = 1.85 A
18 17 16 15
Efficiency
+85C +25C -10 C
18
IDQ = 1.2 A
17 40 45 50 55
Output Power (dBm)
Output Power (dBm)
Intermodulation Distortion vs. Output Power
VDD = 30 V, IDQ = 1.85 A, 1 = 1990 MHz, 2 = 1989 MHz
-20 -30
IMD (dBc)
-40
IMD3
-50
IMD5
-60
IMD7
-70 35 40 45 50 55
Output Power, PEP (dBm)
Data Sheet
5 of 15
Rev. 09, 2010-11-09
Nornalized to 50 Ohms
0.
4
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
T OW A
RD G E NE RA T O
PTFB192503EL PTFB192503FL
R -->
D
Z Source
Z Load
- WAVE LE NGTH S
0.0
0.1
0.2
0.3
D LOAD S TOW AR NGT H VEL E
2020 MHz
G S
Z Load
0.1
Z Source
Frequency
MHz 1900 1930 1960 1990 2020 R
Z Source W
jX -3.92 -3.67 -3.44 -3.21 -2.98 R 2.63 2.56 2.48 2.42 2.35
Z Load W
jX -4.49 -4.35 -4.21 -4.07 -3.93 1.36 1.33 1.31 1.28 1.26
1900 MHz
WA <---
0. 2
0. 3
0.
45
See next page for reference circuit information
0.
05
0.
4
0.
5
Data Sheet
6 of 15
Rev. 09, 2010-11-09
0. 6
0.4
0.
3
0. 2
0 .1
Z0 = 50 W
PTFB192503EL/FL_INPUT
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit
S2 C802 1000 pF
8 4
C803 1000 pF
1 7 5
In NC
2 3
Out NC
6
R801 100 Ohm R805 1200 Ohm
2C 1 4
C801 1000 pF
R803 10 Ohm S3
B S
3E
S1 R802 10 Ohm
3
R804 1300 Ohm
TL110 TL112 TL127 TL113 TL128
2 3 1 2 3 1
TL121
R101 10 Ohm TL118
TL108
1 3 2
TL122
TL106
TL115 C105 2200000 pF C107 8.2 pF TL114 C103 10000000 pF
3 1
TL135 C101 10 pF TL111 TL136
2
RF_IN
TL101
TL109
TL124
TL103
TL126
TL129
TL102
TL104
1
2 3
TL119
4
GATE DUT (Pin G)
C104 10000000 pF
2 3 1
C106 2200000 pF TL134
2 3 1
TL125 C102 8.2 pF TL116
TL133 TL132
H=30 mil RO/RO4350B1
2 3 1
TL120
R102 10 Ohm
TL117
TL107
2
3 1
TL123
TL105
b192503efl_bdin_08-23-2010
er=3.48
TL131 TL130
Reference circuit input schematic for = 1990 MHz
Data Sheet
7 of 15
Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C202 10000000 pF C206 100000 pF TL220
3 1 2
C210 2200000 pF TL203
1 2
C208 1000000 pF
3 1
TL209 TL207
DUT (Pin V)
2
3
TL202
2
TL215
3 1
TL212
1 3 2
TL216
VDD
C204 10000000 pF C213 1.1 pF
TL226 TL227
TL225 TL236 TL224 TL204
TL232
DRAIN DUT (Pin D)
TL210
TL205
TL234
1
2 3
TL235
4
TL211
TL231
TL221
TL230
TL229
TL222
C207 10 pF
TL223
TL228
RF_OUT
TL233
C212 1.1 pF C205 10000000 pF TL214 TL201
1 3 2
DUT (Pin V)
TL206 TL213
1 3 2
TL208
H=30 mil RO/RO4350B1
2 3 1
TL217
TL219
b192503efl_bdout_08-23-2010
3 1
TL218
VDD
1 3
2
2
er=3.48
C203 10000000 pF
C201 100000 pF
C211 2200000 pF
C209 1000000 pF
Reference circuit output schematic for = 1990 MHz
See next page for more reference circuit information
Data Sheet
8 of 15
Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT PCB PTFB192503EL or PTFB192503FL 0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 1990 MHz Transmission Line
Input TL224 TL101 TL102 TL103 TL104 TL105, TL106 TL107, TL108 TL109 TL110, TL130 TL111 TL112 TL113, TL133 TL114, TL125 TL115, TL116 TL117, TL118 TL119 TL120, TL121 TL122, TL123 TL124 TL126 (taper) TL127, TL132 TL128 TL129 TL131 TL134 TL135, TL136 0.015 , 38.82 W 0.071 , 92.53 W 0.016 , 68.02 W 0.024 , 78.27 W 0.023 , 78.27 W 0.001 , 68.02 W 0.014 , 78.27 W 0.024 , 9.67 W 0.007 , 68.02 W 0.125 , 78.27 W 0.008 , 45.17 W 0.030 , 9.67 W / 51.58 W 0.011 , 68.02 W 0.022 , 78.27 W 0.077 , 9.67 W 0.016 , 68.02 W 0.022 , 78.27 W 0.016 , 92.53 W 0.011 , 78.27 W 0.000 , 144.35 W 0.037 , 51.58 W 0.053 , 9.67 W 0.033 , 51.58 W W1 = 0.025, W2 = 0.025, W3 = 0.025 W = 1.651, L = 3.358 W = 13.970, L = 4.470 W = 1.651, L = 3.018 W1 = 13.970, W2 = 0.762, W3 = 13.970, W4 = 0.762 W = 0.762 W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 1.651, W2 = 2.032 W = 2.540, L = 1.321 W = 0.508, L = 6.756 W = 1.016, L = 1.524 W = 0.762, L = 2.286 W = 0.762, L = 2.159 W = 1.016, L = 0.127 W = 0.762, L = 1.270 W = 13.970, L = 1.981 W = 1.016, L = 0.686 W = 0.762, L = 11.684 W = 2.032, L = 0.762 W1 = 13.970, W2 = 1.651, L = 2.515 W1 = 1.016, W2 = 1.016, W3 = 1.016 W1 = 0.762, W2 = 0.762, W3 = 2.032 W = 13.970, L = 6.502 W = 1.016, L = 1.524 W1 = 0.762, W2 = 0.762, W3 = 2.032 W1 = 0.508, W2 = 0.508, W3 = 1.524 W1 = 1, W2 = 1, W3 = 1 W = 65, L = 132 W = 550, L = 176 W = 65, L = 119 W1 = 550, W2 = 30, W3 = 550, W4 = 30 W = 30 W1 = 30, W2 = 30, W3 = 40 W1 = 65, W2 = 80 W = 100, L = 52 W = 20, L = 266 W = 40, L = 60 W = 30, L = 90 W = 30, L = 85 W = 40, L = 5 W = 30, L = 50 W = 550, L = 78 W = 40, L = 27 W = 30, L = 460 W = 80, L = 30 W1 = 550, W2 = 65, L = 99 W1 = 40, W2 = 40, W3 = 40 W1 = 30, W2 = 30, W3 = 80 W = 550, L = 256 W = 40, L = 60 W1 = 30, W2 = 30, W3 = 80 W1 = 20, W2 = 20, W3 = 60
Electrical Characteristics
Dimensions: mm
Dimensions: mils
table continued on page 10
Data Sheet
9 of 15
Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 1990 MHz Transmission Line
Output TL201, TL202, TL203, TL213 0.026 , 34.08 W TL204 TL205 TL206 TL207 TL208, TL209, TL212 TL210 TL211 (taper) TL214, TL220 TL215, TL217 TL216 TL218 TL219 TL221 (taper) TL222 TL223 TL224, TL225, TL226, TL228 TL227 TL229 (taper) TL230 TL231 TL232, TL233 TL234 TL235 TL236 0.005 , 6.86 W 0.014 , 51.58 W 0.014 , 51.58 W 0.019 , 19.45 W / 51.58 W 0.000 , 19.45 W 0.000 , 8.37 W 0.000 , 146.88 W 0.019 , 6.86 W / 8.37 W 0.009 , 34.08 W 0.118 , 34.08 W 0.019 , 34.08 W 0.025 , 34.08 W 0.034 , 34.08 W 0.041 , 8.37 W / 19.45 W 0.007 , 51.58 W 0.011 , 45.17 W 0.012 , 51.58 W 0.084 , 6.86 W 0.029 , 23.60 W 0.029 , 23.79 W 0.034 , 34.08 W W1 = 3.048, W2 = 3.048, W3 = 2.286 W = 1.651, L = 1.118 W = 20.320, L = 6.985 W = 4.928, L = 2.540 W = 4.877, L = 2.540 W1 = 3.048, W2 = 3.048, W3 = 3.048 W1 = 12.700, W2 = 17.780 W1 = 20.320, W2 = 16.383, L = 1.575 W1 = 3.048, W2 = 3.048, W3 = 0.762 W = 3.048, L = 10.516 W = 3.048, L = 1.702 W = 3.048, L = 2.210 W1 = 3.048, W2 = 3.048, W3 = 3.048 W1 = 16.383, W2 = 6.248, L = 3.429 W = 1.651, L = 0.635 W = 2.032, L = 1.016 W = 0.002, ANG = 90, R = 0.002 W = 1.651, L = 1.270 W1 = 6.248, W2 = 1.651, L = 1.651 W = 6.248, L = 0.025 W = 16.383, L = 0.025 W = 0.025, L = 0.025 W1 = 20.320, W2 = 0.025, W3 = 20.320, W4 = 0.025 W = 20.320, L = 0.406 W = 1.651, L = 1.270 W1 = 120, W2 = 120, W3 = 90 W = 65, L = 44 W = 800, L = 275 W = 194, L = 100 W = 192, L = 100 W1 = 120, W2 = 120, W3 = 120 W1 = 500, W2 = 700 W1 = 800, W2 = 645, L = 62 W1 = 120, W2 = 120, W3 = 30 W = 120, L = 414 W = 120, L = 67 W = 120, L = 87 W1 = 120, W2 = 120, W3 = 120 W1 = 645, W2 = 246, L = 135 W = 65, L = 25 W = 80, L = 40 W = 2, ANG = 3543307, R = 70 W = 65, L = 50 W1 = 246, W2 = 65, L = 65 W = 246, L = 1 W = 645, L = 1 W = 1, L = 1 W1 = 800, W2 = 1, W3 = 800, W4 = 1 W = 800, L = 16 W = 65, L = 50
Electrical Characteristics
Dimensions: mm
Dimensions: mils
Data Sheet
10 of 15
Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No.
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
PTFB192503EL/FL_02
LTN/PTFB192503EF
(60) RO4350, .030 (60)
VDD R804 C801 R805 S1 C206 C210 C208 C202
RO4350, .030
C803 C802 R801
S3
R802
R803
+
VDD
S2
+
R101 C107 C105 C103
C213
C204
10 F
RF_IN
C101 C207 C104 C106 R102
RF_OUT
C102 C212 C205
C203
C211 C209 C201
PTFB192503_IN_02
PTFB192503_OUT_02
b192503efl_CD_11-09-2010
Reference circuit assembly diagram (not to scale)
Data Sheet
11 of 15
+
VDD
10 F
Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component
Input C101 C102, C107 C103, C104 C105, C106 C801, C802, C803 R101, R102, R802, R803 R801 R804 R805 S1 S2 S3 Output C201, C206 C202, C203 C204, C205 C207 C208, C209 C210, C211 C212, C213 Chip capacitor, 0.1 F Chip capacitor, 10 F Capacitor, 10 F Capacitor, 10 pF Chip capacitor, 1 F Chip capacitor, 2.2 F Chip capacitor, 1.1 pF Digi-Key Digi-Key Digi-Key ATC Digi-Key Digi-Key ATC 399-1267-2-ND 587-1818-2-ND 281M5002106K ATC100B100FW500XB 445-1411-2-ND 445-1447-2-ND ATC100A1R1BW150XB Chip capacitor, 10 pF Chip capacitor, 8.2 pF Capacitor, 10 F Chip capacitor, 2.2 F Capacitor, 1000 pF Resistor, 10 W Resistor, 100 W Resistor, 1300 W Resistor, 1200 W Transistor Voltage Regulator Potentiometer, 2k W ATC ATC Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key ATC100B100FW500XB ATC100A8R2BW150XB 587-1818-2-ND 445-1447-2-ND PCC1772CT-ND P10ECT-ND P100ECT-ND P1.3KGCT-ND P1.2KGCT-ND BCP5616TA-ND LM78L05ACM-ND 3224W-202ECT-ND
Description
Suggested Manufacturer
P/N
Data Sheet
12 of 15
Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-33288-6
45 X 2.032 [45 X .080] 4X 30 4X R1.524 [R.060] 4X 1.143 [.045] (4 PLS) 2X 5.080 [.200] (2 PLS)
V
D
V
S
C L 9.398 [.370]
4.889.510 [.192.020]
9.779 [.385] 19.558.510 [.770.020]
2X R1.626 [R.064]
E
C L 2X 12.700 [.500] 2X 22.860 [.900]
G
H - 3288 - 6_ po _02 - 8 - 2010 3 1
F
27.940 [1.100] 4.039 +.254 -. 127 [.159 +. 010 ] -. 005
22.352.200 [.880.008]
1.575 [.062] (SPH) 1.016 [.040]
C L 34.036 [1.340]
Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: G = gate, S = source, D = drain, V = VDD, E, F = N.C. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet
13 of 15
Rev. 09, 2010-11-09
PTFB192503EL PTFB192503FL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-34288-4/2
45 X 2.032 [45 X .080] 22.860 [.900] 2X 5.080 [.200] C L 2X 30 2X 1.143 [.045]
V
D
V
4.889.510 [.192.020]
C L
9.398 [.370]
9.779 [.385]
19.558.510 [.770.020]
4X R0.508+.381 -.127 R.020+.015 -.005
[
]
2X 12.700 [.500] 22.352.200 [.880.008]
G
4.039+.254 -.127 .159+.010 -.005
[
]
C 66065- 0003- C A 743- 01- 027 H 34288- 4_ . w 0 2dg
1.575 [.062] (SPH) 1.016 [.040]
C L 23.114 [.910]
S
Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
14 of 15
Rev. 09, 2010-11-09
PTFB192503EL V1/ PTFB192503FL V2 Confidential, Limited Internal Distribution Revision History: 2010-11-09 Previous Version: 2010-10-07, Data Sheet Page Subjects (major changes since last revision) 1, 2, 13 Changed eared flange package type 1 Updated VSWR specification to 10:1
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
Edition 2010-11-09 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 15 of 15 Rev. 09, 2010-11-09

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Price & Availability of PTFB192503EL

Part #	Manufacturer	Description	Price	BuyNow Qty.
PTFB192503EL-V1-R0 PTFB192503EL-V1-R0-ND	MACOM	RF MOSFET LDMOS 30V H-33288-6	50: USD121.8616	0
PTFB192503EL-V1-R250 PTFB192503EL-V1-R250-ND	MACOM	RF MOSFET LDMOS 30V H-33288-6	250: USD109.88192	0

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