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2SB647 / 2SB647A PNP General Purpose Transistors
P b Lead(Pb)-Free
3 2 2 3 1.EMITTER 3.BASE 2.COLLECTOR 1
1
TO-92MOD
MAXIMUM RATINGS(Ta=25C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25C Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC PD Tj Tstg
Value
80 120 5.0 1000 900 +150 -55 to +150
Unit
V V V mA mW C C
WEITRON
http://www.weitron.com.tw
1/5
09-Dec-08
2SB647 / 2SB647A
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage 2SB647 V(BR)CEO 2SB647A Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency VCEsat VCE=-5 V, IC= -500mA IC=-500mA, IB=-50mA VCE=-5V, IC= -150mA VCE=-10V, IE=0 f=1 MHz 30 140 -1 V MHz V(BR)EBO ICBO hFE(1)* IE= -10? A, IC=0 VCB= -100 V, IE=0 VCE=-5 V, IC= -150mA IC=-1mA , IB=0 Symbol V(BR)CBO Test conditions MIN -120 -80 -100 -5 60 60 MAX -10 320 200 UNIT V V V ?A -
Ic= -10? A , IE=0
fT Cob
Output capacitance
20
pF
CLASSIFICATION OF hFE Rank
2SB647 Range 2SB647A 60-120 100-200 B 60-120 C 100-200 D 160-320
WEITRON
http://www.weitron.com.tw
2/5
09-Dec-08
2SB647 / 2SB647A
Typical Characteristics
WEITRON
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3/5
09-Dec-08
2SB647 / 2SB647A
WEITRON
http://www.weitron.com.tw
4/5
09-Dec-08
2SB647 / 2SB647A
TO-92MOD Outline Dimensions
G
unit:mm
TO-92MOD
J
D
C
K L
Dim A B C D E G J K L M
M in M ax 4.70 5.10 1.73 2.03 0.40 0.60 0.90 1.10 0.40 0.50 5.80 6.20 8.40 8.80 1.50Typ 2.90 3.10 12.20 13.45
B
M
WEITRON
http://www.weitron.com.tw
E
A
5/5
09-Dec-08

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Price & Availability of 2SB647

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB647CTZ-E 2156-2SB647CTZ-E-ND	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANS PNP	478: USD0.63	3527
2SB647DTZ 2156-2SB647DTZ-ND	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR,		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB647	Mitsubishi Electric			209

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB647	Hitachi Ltd	Bipolar Junction Transistor, PNP Type, TO-92	572: USD0.3125 121: USD0.35 1: USD0.75	978
2SB647	MITSUBISHI ELECTRIC	Bipolar Junction Transistor, PNP Type, TO-92	55: USD0.925 15: USD1.11 1: USD1.85	167

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB647C-E	Renesas Electronics Corporation	Small Signal Bipolar Transistor, 1A, 80V, PNP '	1000: USD0.6383 500: USD0.6758 100: USD0.7058 25: USD0.7359 1: USD0.7509	392
2SB647CTZ-E	Renesas Electronics Corporation	2SB647 - Small Signal Bipolar Transistor, 1A, 80V, PNP '	1000: USD0.5395 500: USD0.5712 100: USD0.5966 25: USD0.622 1: USD0.6347	3527
2SB647DTZ	Renesas Electronics Corporation	2SB647 - Small Signal Bipolar Transistor, 1A, 80V, PNP '	1000: USD0.5395 500: USD0.5712 100: USD0.5966 25: USD0.622 1: USD0.6347	9975

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SB647A-C	Foshan Blue Rocket Electronics Co Ltd	100V 900mW 100150mA5V 1A PNP TO-92LM Bipolar (BJT) ROHS	5000: USD0.0393 2500: USD0.0413 500: USD0.0453 150: USD0.0504 50: USD0.057 5: USD0.0704	3709

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