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| Type IPP015N04N G IPB015N04N G OptiMOSTM3 Power-Transistor Features * Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters * Qualified according to JEDEC for target applications * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 100% Avalanche tested * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type IPB015N04N G IPP015N04N G 1) Product Summary V DS R DS(on),max ID 40 1.5 120 V m A Package Marking PG-TO263-3 015N04N PG-TO220-3 015N04N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage 1) 2) 3) Value 120 120 400 100 865 20 Unit A I D,pulse I AS E AS V GS T C=25 C T C=25 C I D=100 A, R GS=25 mJ V J-STD20 and JESD22 See figure 3 for more detailed information See figure 13 for more detailed information Rev. 2.2 page 1 2009-11-16 IPP015N04N G IPB015N04N G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 C Value 250 -55 ... 175 55/175/56 Unit W C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm cooling area 4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=200 A V DS=40 V, V GS=0 V, T j=25 C V DS=40 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 5) - - 0.6 62 40 K/W 40 2 - 0.1 4 2 V A - 20 10 1.2 1.5 230 200 100 1.5 nA m S I GSS R DS(on) RG g fs V GS=20 V, V DS=0 V V GS=10 V, I D=100 A |V DS|>2|I D|R DS(on)max, I D=100 A 120 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Measured from drain tab to source pin 5) Rev. 2.2 page 2 2009-11-16 IPP015N04N G IPB015N04N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s 0.88 120 400 1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 10 V V DD=20 V, V GS=0 V V DD=20 V, I D=100 A, V GS=0 to 10 V 76 46 23 75 188 5.0 177 147 250 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 V GS=0 V, V DS=20 V, f =1 MHz 15000 4000 160 40 10 64 13 20000 pF 5300 ns Values typ. max. Unit Reverse recovery charge Q rr - 141 - nC 6) See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2009-11-16 IPP015N04N G IPB015N04N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 300 140 250 120 100 200 P tot [W] 80 150 I D [A] 60 40 20 0 0 50 100 150 200 0 50 100 150 200 100 50 0 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 1 s 10 s 0.5 100 s DC 0.2 10 2 1 ms 10-1 10 ms 101 Z thJC [K/W] 0.1 I D [A] 0.05 0.02 10 10 0 -2 0.01 single pulse 10-1 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.2 page 4 2009-11-16 IPP015N04N G IPB015N04N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 600 7V 6.5 V 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 3 5V 500 2.5 400 6V 2 R DS(on) [m] 5.5 V 6V I D [A] 300 1.5 7V 6.5 V 10 V 200 5.5 V 1 100 5V 0.5 0 0 1 2 3 0 0 40 80 120 160 200 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 600 8 Typ. forward transconductance g fs=f(I D); T j=25 C 350 500 300 250 400 200 300 g fs [S] 175 C 25 C I D [A] 150 200 100 100 50 0 1 2 3 4 5 6 7 0 0 40 80 120 160 200 V GS [V] I D [A] Rev. 2.2 page 5 2009-11-16 IPP015N04N G IPB015N04N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=1mA 3 5 2.5 4 2 R DS(on) [m] 98 % 1.5 typ V GS(th) [V] 100 140 180 3 2 1 0.5 1 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 1000 25 C, 98% 104 Ciss Coss 175 C, 98% 100 25 C C [pF] 103 I F [A] 175 C Crss 10 102 101 0 10 20 30 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 2.2 page 6 2009-11-16 IPP015N04N G IPB015N04N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 1000 14 Typ. gate charge V GS=f(Q gate); I D=100 A pulsed parameter: V DD 12 20 V 10 8V 100 25 C 100 C 8 32 V V GS [V] 103 I AV [A] 6 10 150 C 4 2 1 10-1 100 101 102 0 0 50 100 150 200 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 45 V GS Qg 40 V BR(DSS) [V] 35 30 V g s(th) 25 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [C] Rev. 2.2 page 7 2009-11-16 IPP015N04N G IPB015N04N G Package Outline PG-TO263-3 Rev. 2.2 page 8 2009-11-16 IPP015N04N G IPB015N04N G Package Outline PG-TO220-3-1 Rev. 2.2 page 9 2009-11-16 IPP015N04N G IPB015N04N G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 10 2009-11-16 |
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