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| www..com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J308/D JFET VHF/UHF Amplifiers J308 1 DRAIN N-Channel -- Depletion 3 GATE J309 J310 Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Drain - Source Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 - 65 to +125 - 65 to +150 Unit Vdc Vdc mAdc mW mW/C C C CASE 29-04, STYLE 5 TO-92 (TO-226AA) 1 2 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate - Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc, VDS = 0, TA = 25C) (VGS = -15 Vdc, VDS = 0, TA = +125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) J308 J309 J310 V(BR)GSS IGSS -- -- VGS(off) - 1.0 - 1.0 - 2.0 -- -- -- - 6.5 - 4.0 - 6.5 -- -- -1.0 -1.0 nAdc Adc Vdc - 25 -- -- Vdc ON CHARACTERISTICS Zero - Gate -Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 VGS(f) 12 12 24 -- -- -- -- -- 60 30 60 1.0 Vdc mAdc Gate-Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) SMALL- SIGNAL CHARACTERISTICS Common-Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 Re(yos) Gpg -- -- -- -- -- 0.7 0.7 0.5 0.25 16 -- -- -- -- -- mmhos dB mmhos Common-Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 s, Duty Cycle v 3.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 J308 J309 J310 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL- SIGNAL CHARACTERISTICS (continued) Common-Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308 J309 J310 gos gfg J308 J309 J310 gog J308 J309 J310 Cgd Cgs -- -- -- -- -- 150 100 150 1.8 4.3 -- -- -- 2.5 5.0 pF pF -- -- -- 13000 13000 12000 -- -- -- mhos Re(yfs) Re(yig) gfs 8000 10000 8000 -- -- -- -- -- 20000 20000 18000 250 mhos mhos -- -- 12 12 -- -- mmhos mmhos mhos Common-Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common-Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common-Gate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Gate-Drain Capacitance (VDS = 0, VGS = -10 Vdc, f = 1.0 MHz) Gate-Source Capacitance (VDS = 0, VGS = -10 Vdc, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz) Equivalent Short-Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) NF en -- -- 1.5 10 -- -- dB nV Hz 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data J308 J309 J310 50 SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 - 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539-002D. C5 = C6 = 5000 pF Erie (2443-000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 H Miller #9230-30. L1 = One Turn #16 Cu, 1/4 I.D. (Air Core). L2P = One Turn #16 Cu, 1/4 I.D. (Air Core). L2S = One Turn #16 Cu, 1/4 I.D. (Air Core). RFC C1 C2 C4 C6 L2P L2S 50 LOAD Figure 1. 450 MHz Common-Gate Amplifier Test Circuit 60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 -5.0 IDSS + 25C + 25C TA = - 55C 60 50 40 +150C + 25C - 55C 30 20 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) 35 30 25 20 15 10 +150C + 25C - 55C +150C VDS = 10 V f = 1.0 MHz TA = - 55C + 25C +150C 10 0 0 5.0 0 5.0 4.0 3.0 2.0 1.0 0 -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 2. Drain Current and Transfer Characteristics versus Gate-Source Voltage Figure 3. Forward Transconductance versus Gate-Source Voltage Yfs , FORWARD TRANSCONDUCTANCE (mhos) 100 k Yfs 1.0 k Yos, OUTPUT ADMITTANCE ( mhos) 10 RDS CAPACITANCE (pF) 7.0 120 R DS , ON RESISTANCE (OHMS) Yfs 10 k 96 100 72 Cgs 4.0 48 1.0 k Yos VGS(off) = - 2.3 V = VGS(off) = - 5.7 V = 10 Cgd 1.0 0 10 24 100 0.01 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 4. Common-Source Output Admittance and Forward Transconductance versus Drain Current Figure 5. On Resistance and Junction Capacitance versus Gate-Source Voltage Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 J308 J309 J310 30 VDS = 10 V ID = 10 mA TA = 25C 3.0 |S21|, |S11| 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 0.012 0.92 0.036 0.96 0.048 0.98 |S12|, |S22| 0.060 1.00 |Y11|, |Y21 |, |Y22 | (mmhos) 24 18 12 Y21 Y22 1.2 0.67 0.27 0.024 0.94 6.0 Figure 6. Common-Gate Y Parameter Magnitude versus Frequency 21, 11 180 50 22 170 40 21 12, 22 - 20 87 - 20 - 40 - 60 - 80 - 100 150 20 12 11 140 10 VDS = 10 V ID = 10 mA TA = 25C 700 - 120 84 - 140 - 160 83 - 180 - 200 82 1000 - 120 - 100 - 80 85 - 60 86 Figure 7. Common-Gate S Parameter Magnitude versus Frequency 11, 12 - 20 120 21 21, 22 0 22 11 - 40 100 - 20 160 30 80 - 40 60 12 40 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) 21 11 - 60 - 80 130 0 100 200 300 500 f, FREQUENCY (MHz) 20 100 700 - 100 1000 Figure 8. Common-Gate Y Parameter Phase-Angle versus Frequency Figure 9. S Parameter Phase-Angle versus Frequency 8.0 7.0 NF, NOISE FIGURE (dB) 6.0 5.0 Gpg 4.0 NF 3.0 2.0 1.0 0 4.0 6.0 8.0 10 12 14 16 18 ID, DRAIN CURRENT (mA) 20 22 VDD = 20 V f = 450 MHz BW 10 MHz CIRCUIT IN FIGURE 1 24 21 G pg , POWER GAIN (dB) NF, NOISE FIGURE (dB) 18 15 12 9.0 6.0 3.0 0 24 7.0 26 6.0 5.0 4.0 3.0 2.0 1.0 2.0 0 50 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Gpg VDS = 10 V ID = 10 mA TA = 25C CIRCUIT IN FIGURE 1 NF 6.0 18 14 10 G pg , POWER GAIN (dB) 22 Figure 10. Noise Figure and Power Gain versus Drain Current Figure 11. Noise Figure and Power Gain versus Frequency 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data J308 J309 J310 C1 S G L1 INPUT RS = 50 C2 L2 C3 U310 D C4 L3 C5 L4 C6 BW (3 dB) - 36.5 MHz ID - 10 mAdc VDS - 20 Vdc Device case grounded IM test tones - f1 = 449.5 MHz, f2 = 450.5 MHz C1 = 1-10 pF Johanson Air variable trimmer. C2, C5 = 100 pF feed thru button capacitor. C3, C4, C6 = 0.5-6 pF Johanson Air variable trimmer. L1 = 1/8 x 1/32 x 1-5/8 copper bar. L2, L4 = Ferroxcube Vk200 choke. L3 = 1/8 x 1/32 x 1-7/8 copper bar. OUTPUT RL = 50 VS SHIELD VD Figure 12. 450 MHz IMD Evaluation Amplifier Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm. +40 OUTPUT POWER PER TONE (dBm) +20 0 -20 -40 -60 -80 -100 -120 -120 U310 JFET VDS = 20 Vdc ID = 10 mAdc F1 = 449.5 MHz F2 = 450.5 MHz 3RD ORDER INTERCEPT POINT FUNDAMENTAL OUTPUT Example of intercept point plot use: Assume two in-band signals of -20 dBm at the amplifier input. They will result in a 3rd order IMD signal at the output of -90 dBm. Also, each signal level at the output will be -11 dBm, showing an amplifier gain of 9.0 dB and an intermodulation ratio (IMR) capability of 79 dB. The gain and IMR values apply only for signal levels below comparison. 0 +20 3RD ORDER IMD OUTPUT -100 -60 -40 -20 -80 INPUT POWER PER TONE (dBm) Figure 13. Two Tone 3rd Order Intercept Point Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 J308 J309 J310 PACKAGE DIMENSIONS A R P SEATING PLANE B F L K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- XX G H V 1 D J C SECTION X-X N N DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data J308 J309 J310 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 J308 J309 J310 Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 8 Motorola Small-Signal Transistors, FETs and Diodes DeviceJ308/D Data |
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