power transistors 1 2sC5583 silicon npn triple diffusion mesa type for horizontal deflection output features ? high breakdown voltage, and high reliability through the use of a glass passivation layer ? high-speed switching ? wide area of safe operation (aso) absolute maximum ratings t c = 25 c unit: mm parameter symbol rating unit collector to base voltage v cbo 1 500 v collector to emitter voltage v ces 1 500 v v ceo 600 v emitter to base voltage v ebo 7v peak collector current i cp 30 a collector current i c 17 a base current i b 8 a collector power t c = 25 cp c 150 w dissipation t a = 25 c3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c electrical characteristics t c = 25 c 3 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 1 000 v, i e = 050 a v cb = 1 500 v, i e = 01ma emitter cutoff current i ebo v eb = 7 v, i c = 050 a forward current transfer ratio h fe v ce = 5 v, i c = 8.5 a 6 12 collector to emitter saturation voltage v ce(sat) i c = 8.5 a, i b = 2.13 a 3 v base to emitter saturation voltage v be(sat) i c = 8.5 a, i b = 2.13 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.1 a, f = 0.5 mhz 3 mhz storage time t stg i c = 8.5 a, resistance loaded 2.7 s fall time t f i b1 = 2.13 a, i b2 = ? 4.25 a 0.2 s 20.0 0.5 2.0 0.3 3.0 0.3 1.0 0.2 5.45 0.3 10.9 0.5 123 26.0 0.5 (10.0) (2.5) solder dip (6.0) (4.0) (2.0) (1.5) (1.5) 20.0 0.5 5.0 0.3 3.3 0.2 (1.5) 2.7 0.3 0.6 0.2 (3.0) (3.0) (2.0) 1: base 2: collector 3: emitter top-3l package internal connection b c e marking symbol: C5583
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