todv 640 ---> 1240 march 1995 alternistors symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) tc = 75 c40 a i tsm non repetitive surge peak on-state current ( tj initial = 25 c ) tp = 2.5 ms 590 a tp = 8.3 ms 370 tp = 10 ms 350 i 2 ti 2 t value tp = 10 ms 610 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 500ma di g /dt = 1a/ m s repetitive f = 50 hz 20 a/ m s non repetitive 100 tstg tj storage and operating junction temperature range - 40 to + 150 - 40 to + 125 c c tl maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 c rd91 (plastic) . high commutation : > 142 a/ms (400hz) . insulating voltage = 2500v (rms) (ul recognized : eb1734) . high voltage capability : v drm = 1200 v description symbol parameter todv unit 640 840 1040 1240 v drm v rrm repetitive peak off-state voltage tj = 125 c 600 800 1000 1200 v absolute ratings (limiting values) features the todv 640 ---> 1240 use a high performance passivated glass alternistor technology. featuring very high commutation levels and high surge cur- rent capability, this family is well adapted to power control on inductive load (motor, transformer...) a 2 g a 1 1/5
gate characteristics (maximum values) symbol parameter value unit rth (c-h) contact (case-heatsink) with grease 0.1 c/w rth (j-c) dc junction to case for dc 1.2 c/w rth (j-c) ac junction to case for 360 conduction angle ( f= 50 hz) 0.9 c/w symbol test conditions quadrant value unit i gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 200 ma v gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 1.5 v v gd v d =v drm r l =3.3k w tj=125 c i-ii-iii min 0.2 v tgt v d =v drm i g = 500ma di g /dt = 3a/ m s tj=25 c i-ii-iii typ 2.5 m s i l i g =1.2 i gt tj=25 c i-iii typ 100 ma ii 200 i h * i t = 500ma gate open tj=25 c typ 50 ma v tm *i tm = 60a tp= 380 m s tj=25 c max 1.8 v i drm i rrm v drm rated v rrm rated tj=25 c max 0.02 ma tj=125 c max 8 dv/dt * linear slope up to v d =67%v drm gate open tj=125 c min 500 v/ m s (di/dt)c * (dv/dt)c = 200v/ m s tj=125 c min 35 a/ms (dv/dt)c = 10v/ m s142 * for either polarity of electrode a 2 volt age with reference to electrode a 1 . p g (av) = 1w p gm = 40w (tp = 20 m s) i gm = 8a (tp = 20 m s) v gm = 16v (tp = 20 m s). electrical characteristics thermal resistances todv 640 ---> 1240 2/5
fig.1 : maximum rms power dissipation versus rms on-state current (f=50hz). (curves are cut off by (di/dt)c limitation) fig.2 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact. fig.3 : rms on-state current versus case temperature. tp(s) 1e-3 1e-2 1e-1 1e+0 1e+1 0.01 0.1 1 zth(j-c)/rth(j-c) fig.4 : relative variation of thermal impedance junction to case versus pulse duration. fig.5 : relative variation of gate trigger current and holding current versus junction temperature. fig.6 : non repetitive surge peak on-state current versus number of cycles. todv 640 ---> 1240 3/5
fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of i 2 t. fig.8 : on-state characteristics (maximum values). fig.9 : safe operating area. todv 640 ---> 1240 4/5
package mechanical data rd91 plastic marking : type number weight : 20 g a a1 a2 b d1 b2 c c1 c2 e f i li l2 n1 n2 ref. dimensions millimeters inches min. max. min. max. a 40.00 1.575 a1 29.90 30.30 1.177 1.193 a2 22.00 0.867 b 27.00 1.063 b1 13.50 16.50 0.531 0.650 b2 24.00 0.945 c 14.00 0.551 c1 3.50 0.138 c2 1.95 3.00 0.077 0.118 e 0.70 0.90 0.027 0.035 f 4.00 4.50 0.157 0.177 i 11.20 13.60 0.441 0.535 l1 3.10 3.50 0.122 0.138 l2 1.70 1.90 0.067 0.075 n1 33 43 33 43 n2 28 38 28 38 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microel ectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the nether- lands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. todv 640 ---> 1240 5/5
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