savantic semiconductor product specification silicon pnp power transistors 2SA1470 description with to-220f package complement to type 2sc3747 low saturation voltage fast switching time applications inductance,lamp drivers inverters ,converters power amplification high-speed switching pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i cm collector current-peak -10 a t a =25 2 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1470 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ;r be = < -60 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -80 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-3.5a i b =-0.175a -0.4 v i cbo collector cut-off current v cb =-40v i e =0 -0.1 ma i ebo emitter cut-off current v eb =-4v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-2v 70 280 f t transition frequency i c =-1a ; v ce =-5v 100 mhz switching times t on turn-on time 0.1 s t s storage time 0.5 s t f fall time i c =-3.0a;i b1 =-i b2 =-0.15a v cc =20v ,r l =6.67 b 0.1 s h fe classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1470 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1470
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