savantic semiconductor product specification silicon pnp power transistors 2SA913 2SA913a d escription with to-220 package complement to type 2sc1913/1913a large collector power dissipation high v ceo applications audio frequency high power driver pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SA913 -150 v cbo collector- base voltage 2SA913a open emitter -180 v 2SA913 -150 v ceo collector- emitter voltage 2SA913a open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -1 a i cm collector current-peak -1.5 a p c collector power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA913 2SA913a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA913 -150 v (br)ceo collector-emitter breakdown voltage 2SA913a i c =-0.1ma ,i b =0 -180 v v (br)ebo emitter-base breakdown volt age i e =-10a ,i c =0 -5 v 2SA913 i c =-0.5a; i b =-50ma -1.0 v cesat collector-emitter saturation voltage 2SA913a i c =-0.3a; i b =-30ma -1.5 v 2SA913 i c =-0.5a; i b =-50ma v besat base-emitter saturation voltage 2SA913a i c =-0.3a; i b =-30ma -1.5 v i cbo collector cut-off current v cb =-120v; i e =0 -1 a i ebo emitter cut-off current v eb =-4v; i c =0 -1 a h fe-1 dc current gain i c =-150ma ; v ce =-10v 65 330 h fe-2 dc current gain i c =-500ma ; v ce =-5v 50 c ob output capacitance i e =0 ;v cb =-100v;f=1mhz 15 pf f t transition frequency i c =50ma ; v ce =-10v 120 mhz h fe-1 classifications p q r s 65-110 90-155 130-220 185-330
savantic semiconductor product specification 3 silicon pnp power transistors 2SA913 2SA913a package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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